MSS20-145-B10D

RF Diode Overview

The MSS20-145-B10D is a zero-bias Schottky diode from the MSS20 series, designed for microwave detector applications up to 40 GHz. It utilizes P-type epitaxial substrates to achieve very low 1/f noise performance. The device operates at a maximum frequency of 18 GHz with a typical junction capacitance of 0.12 pF and a tangential signal sensitivity of -58 dBm. Electrical specifications include a video resistance ranging from 1000 to 2000 ohms and voltage sensitivity between 2000 and 5000 mV/mW. Absolute maximum ratings specify a reverse voltage of 1 V, forward current of 35 mA, and power dissipation of 100 mW.

RF Diode Feature Summary

• Fabricated on P-type epitaxial substrates for superior 1/f noise performance in microwave applications
• Designed for detector applications operating up to 40 GHz
• Available in chip beam lead and packaged device configurations

RF Diode Applications

• Microwave detector circuits
• Zero-bias detection systems
• High-frequency signal processing

RF Diode Procurement Notes

Verify the specific ordering suffix against official MACOM documentation to confirm package type and electrical tolerances. Ensure compatibility with surface mount or beam lead assembly processes as defined by the datasheet outline drawings. Confirm that application requirements align with the absolute maximum ratings for reverse voltage and power dissipation before procurement.

RF Diode Selection Notes

Select this component when low 1/f noise is critical for high-frequency detection tasks. The MSS20-145-B10D variant offers a balance of low junction capacitance and moderate video resistance suitable for 18 GHz operation. Evaluate the tangential signal sensitivity and voltage sensitivity parameters against system noise floor requirements to ensure adequate detection performance.

RF Diode Part Context

This part belongs to the MSS20-xxx-x Series of zero-bias Schottky diodes manufactured by MACOM Technology Solutions. The series includes various models optimized for different frequency ranges and packaging styles, such as chip, beam lead, and standard surface mount packages. All variants share common fabrication technologies aimed at enhancing microwave detector performance.

RF Diode Replacement Considerations

Direct replacements within the MSS20 series include MSS20-146-B10D, which shares the same B10D package but features higher video resistance values. Other series members like MSS20-140-B10D operate at higher frequencies but may require adjustments to circuit impedance matching due to differing capacitance characteristics.

RF Diode FAQ

What substrate material is used for the MSS20-145-B10D?

The device is fabricated on P-type epitaxial substrates to provide superior 1/f noise performance.

What is the maximum operating frequency for this model?

The MSS20-145-B10D is specified for operation up to 18 GHz, though the series supports detector applications up to 40 GHz.

What are the absolute maximum ratings for reverse voltage and power dissipation?

The absolute maximum ratings include a reverse voltage of 1 V and a continuous wave power dissipation of 100 mW.