MSS30-448-H47

RF Diode Overview

The MSS30-448-H47 is a packaged low barrier silicon Schottky diode belonging to the MSS30-xxx-x Series. It features a Ring Quad configuration with a typical forward voltage of 0.27 V and a minimum reverse breakdown voltage of 2 V. The device exhibits a typical junction capacitance of 0.12 pF, maximum 0.15 pF, typical series resistance of 7 Ω, and maximum differential resistance of 15 Ω. Its typical cutoff frequency is 190 GHz. Absolute maximum ratings include a reverse voltage of 2 V, forward current of 50 mA, and power dissipation of 100 mW per junction at 25°C. Operating and storage temperatures range from -65°C to +150°C.

RF Diode Feature Summary

• Low barrier silicon Schottky technology optimized for high mixer performance
• Ring Quad configuration suitable for balanced mixer applications
• High cutoff frequency capability for millimeter-wave operations
• Available with Hi-Rel screening options per MIL-PRF-19500 and MIL-PRF-38534

RF Diode Applications

• Microwave and millimeter-wave mixers
• RF detection circuits
• Frequency multiplier stages
• Balanced mixer topologies

RF Diode Procurement Notes

Verify the specific package outline H47 against mechanical constraints before ordering. Confirm that the standard commercial grade meets environmental requirements or request Hi-Rel screening if military standards are necessary. Ensure test conditions align with system operating parameters. Check for any recent datasheet revisions that may affect electrical tolerances. Validate supplier authenticity through authorized MACOM distribution channels.

RF Diode Selection Notes

Select this component when a Ring Quad topology is required for balanced mixer designs. The 0.27 V forward voltage and 7 Ω series resistance support efficient conversion at LO powers between -3 dBm and +3 dBm. Compare junction capacitance and cutoff frequency against other MSS30 variants to match specific frequency bands. Consider thermal derating for power dissipation above 25°C ambient temperature.

RF Diode Part Context

This part belongs to the MSS30-xxx-x Series of low barrier silicon Schottky diodes fabricated on N-type epitaxial substrates. The series offers various configurations including single junction, anti-parallel pairs, and ring quads in chip, beam lead, and packaged forms. These devices are designed to yield high figure of merit (FCO) values for optimal mixer performance in RF and microwave systems.

RF Diode Replacement Considerations

MSS30-442-E45: Similar Ring Quad but different electrical characteristics. MSS30-454-E45: Higher capacitance variant within the same series.