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MSS39-045-C15 is listed in the RF Diode range at ChipApex. The manufacturer field lists MACOM Technology Solutions. Its product description is RF DIODE SCHOTTKY 5V 100MW CHIP. Review the specifications below when checking this part for your BOM.
RF Diode specifications for MSS39-045-C15
- Description：RF DIODE SCHOTTKY 5V 100MW CHIP
- Series：-
- Mfr：MACOM Technology Solutions
- Package：Tray
- Diode Type：Schottky - Single
- Voltage - Peak Reverse (Max)：5V
- Current - Max：50 mA
- Capacitance @ Vr, F：0.1pF @ 0V, 1MHz
- Resistance @ If, F：-
- Power Dissipation (Max)：100 mW
- Operating Temperature：-65°C ~ 150°C
- Package / Case：Die
- Supplier Device Package：Chip
- Grade：-
- Qualification：-
RF Diode datasheet and documents for MSS39-045-C15
RF Diode Overview
The MSS39-045-C15 is a P-Type Silicon Schottky diode from the MSS39 series, designed for microwave biased-detector applications up to 40 GHz. It features a minimum breakdown voltage of 5 V and a typical forward voltage of 0.40 V at 1 mA. The device exhibits a maximum junction capacitance of 0.10 pF at 0 V reverse bias and 1 MHz frequency. Key performance metrics include a threshold sensitivity of -58 dBm and a responsivity of 5,000 mV/mW under DC bias conditions. The component operates within a temperature range of -65°C to +150°C.
RF Diode Feature Summary
- Fabricated on P-type epitaxial substrates to ensure superior low 1/f noise performance in high-frequency detector circuits.
RF Diode Applications
- Microwave biased-detector applications
- Detector circuits operating up to 40 GHz
RF Diode Procurement Notes
Verify the specific package outline C15 against mechanical constraints during integration. Confirm that the absolute maximum ratings, including the 1 V reverse voltage limit and 100 mW power dissipation, are not exceeded in the target circuit design. Ensure soldering procedures adhere to the specified thermal limits to maintain device integrity.
RF Diode Selection Notes
Select this component when low 1/f noise and high detector sensitivity are critical requirements for frequencies approaching 40 GHz. Compare the 0.10 pF capacitance and -58 dBm threshold sensitivity against alternative models in the MSS39 series to determine if the specific electrical characteristics align with the system's signal processing needs.
RF Diode Part Context
This part belongs to the MSS39 series of P-Type Silicon Schottky Diodes manufactured by MACOM Technology Solutions. The series includes various chip beam lead and packaged devices optimized for low noise and high-speed detection. The MSS39-045-C15 represents a specific configuration within this family tailored for high-frequency detector use cases.
RF Diode Replacement Considerations
Other MSS39 series variants such as MSS39-048-C15 share the same C15 outline but differ in forward voltage and capacitance specifications. Verify compatibility before substitution as electrical parameters vary across the series.
RF Diode FAQ
What is the maximum operating frequency for the MSS39-045-C15?
The MSS39-045-C15 is designed for detector applications up to 40 GHz.
What substrate material is used for this diode?
The device is fabricated on P-type epitaxial silicon substrates.
What is the typical threshold sensitivity of the MSS39-045-C15?
The typical threshold sensitivity (TSS) is -58 dBm.
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