MSS50-448-E40

RF Diode Overview

The MSS50-448-E40 is a packaged high barrier silicon Schottky diode from the MSS50 series, configured as a Ring Quad. It features a typical forward voltage (VF) of 0.52 V and a minimum reverse breakdown voltage (VBR) of 5 V. The device has a typical junction capacitance (CT) ranging from 0.38 to 0.48 pF, a typical series resistance (RS) of 10 Ω, and a maximum differential resistance (RD) of 10 Ω. Its typical cutoff frequency (FCO) is 133 GHz. Absolute maximum ratings include a rated reverse voltage of 5 V, a forward current of 50 mA, and power dissipation of 100 mW per junction at 25°C. Operating and storage temperatures range from -65°C to +150°C.

RF Diode Feature Summary

• High cutoff frequency performance achieved through proprietary fabrication processes on N-type epitaxial substrates.
• Optimized for mixer applications with recommended local oscillator power levels between +2 dBm and +8 dBm per diode.
• Available in multiple configurations including chip, beam lead, and packaged devices with matching options for VF, RD, and CJ.

RF Diode Applications

• RF mixer circuits requiring high-frequency operation
• Wireless power detection systems
• Microwave integrated circuit (MMIC) designs

RF Diode Procurement Notes

Verify the specific package outline and electrical tolerances against the official MACOM datasheet before ordering. Confirm that the selected variant meets the required operating temperature range and power dissipation limits for the intended application environment. Ensure compatibility with standard soldering profiles up to +230°C for five seconds.

RF Diode Selection Notes

Select this component based on its 133 GHz cutoff frequency and low junction capacitance for high-speed signal processing. Evaluate the 5 V reverse breakdown rating against peak inverse voltage requirements. Consider the 100 mW power dissipation limit and linear derating curve when designing thermal management solutions for continuous operation.

RF Diode Part Context

This part belongs to the MSS50-xxx-x Series of high barrier silicon Schottky diodes manufactured by MACOM Technology Solutions. The series utilizes proprietary processes to deliver industry-leading cutoff frequencies. The MSS50-448-E40 specifically represents a packaged ring quad configuration within this family, designed for robust integration into complex RF and microwave systems.

RF Diode Replacement Considerations

Direct substitutes are not explicitly listed in the provided documentation. Engineers should evaluate other MSS50-448 variants or comparable high-barrier silicon Schottky diodes from alternative manufacturers, ensuring equivalent FCO, VBR, and CT specifications.

RF Diode FAQ

What is the recommended local oscillator power for optimal mixer performance?

Optimum mixer performance is obtained with an LO power of +2 dBm to +8 dBm per diode.

How does the power dissipation change with temperature?

Power dissipation is rated at 100 mW per junction at TA = 25°C and must be derated linearly to 0 mW at TA = +150°C.

Is high-reliability screening available for this component?

Yes, Hi-Rel screening per MIL-PRF-19500 and MIL-PRF-38534 is available for this series.