MSS60-153-H27

RF Diode Overview

The MSS60-153-H27 is an extra high barrier silicon Schottky diode from the MSS60 series, designed for mixer applications. It features a single junction configuration with a typical forward voltage of 625 mV at 1 mA and a minimum breakdown voltage of 3.5 V. The device exhibits a typical capacitance of 0.16 pF and maximum capacitance of 0.22 pF at 1 MHz. Typical series resistance is 7 Ω, with a maximum reverse recovery delay time of 12 ns. Packaged in the H27 outline, it supports operation between -65°C and +150°C.

RF Diode Feature Summary

• Fabricated on N-type epitaxial substrates using proprietary processes to achieve industry-leading figure of merit (FCO) values.
• Optimized for mixer performance with recommended local oscillator power levels ranging from 6 dBm to 12 dBm per diode.
• Offers matching options for forward voltage, dynamic resistance, and junction capacitance to ensure circuit consistency.

RF Diode Applications

• High-performance RF mixers
• Detector circuits requiring low noise and high sensitivity
• Microwave frequency conversion systems

RF Diode Procurement Notes

Verify the specific package outline and electrical tolerances against the official datasheet before ordering. Confirm that the H27 packaging meets your assembly requirements. Ensure the application does not exceed the absolute maximum ratings, particularly regarding power dissipation derating above 25°C ambient temperature.

RF Diode Selection Notes

Select this component when high barrier height and low capacitance are required for superior mixer performance. Compare the FCO value against other series members to determine the best fit for your specific impedance matching needs. Consider the operating temperature range and power dissipation limits for thermal management.

RF Diode Part Context

This part belongs to the MSS60-xxx-x Series of extra high barrier silicon Schottky diodes. The series includes beam lead and packaged devices available in various configurations such as single junction, tee, and ring quad. These diodes are engineered for high reliability and are suitable for hi-rel screening per MIL-PRF-19500 and MIL-PRF-38534 standards.

RF Diode Replacement Considerations

Other parts within the MSS60-xxx-x Series may serve as alternatives if different configurations or electrical parameters are acceptable. Verify compatibility by comparing key specifications such as breakdown voltage, capacitance, and package outline. Consult MACOM technical support for specific substitution guidance.

RF Diode FAQ

What is the recommended local oscillator power for optimal mixer performance?

Optimum mixer performance is obtained with an LO power of 6 dBm to 12 dBm per diode.

Is hi-rel screening available for this component?

Yes, hi-rel screening is available per MIL-PRF-19500 and MIL-PRF-38534 standards.

What is the maximum operating temperature for the MSS60-153-H27?

The maximum operating temperature is +150°C.