MT3S111TU,LF

Overview

The MT3S111TU,LF is a Silicon-Germanium NPN epitaxial planar transistor designed for VHF-UHF low-noise and low-distortion amplifier applications. It features a transition frequency of 10 GHz and an insertion gain of 12.5 dB at 1 GHz. The device operates with a collector-emitter voltage of 6 V and supports a continuous collector current of 100 mA. Key electrical characteristics include a minimum DC current gain of 200 and a typical noise figure of 0.85 dB. Power dissipation reaches 800 mW on a ceramic board, with a junction temperature limit of 150 °C.

Feature Summary

• Utilizes Silicon-Germanium technology to achieve high-frequency performance suitable for VHF and UHF bands.
• Provides low-noise figure and high gain characteristics optimized for signal amplification.
• Ensures low distortion through high third-order intermodulation distortion output intercept point capabilities.

Applications

• VHF-UHF Low-Noise Amplifier circuits
• Low-Distortion Amplifier stages
• RF signal processing modules

Procurement Notes

Verify the component against the official Toshiba Semiconductor datasheet dated September 26, 2014. Confirm that the marking code matches 'TOSHIBA 2-2U1B' and the package configuration aligns with the specified pinout. Ensure handling precautions are followed due to electrostatic discharge sensitivity inherent in the high-frequency process.

Selection Notes

Select this component when designing circuits requiring operation within the VHF to UHF spectrum. Consider the 10 GHz transition frequency and 0.85 dB noise figure for sensitive receiver front-ends. Verify that the 6 V collector-emitter voltage rating and 100 mA current limits accommodate the specific biasing requirements of the target application.

Part Context

This part belongs to the MT3S111 series manufactured by Toshiba Semiconductor and Storage. It is classified as a bipolar small-signal transistor utilizing SiGe technology. The product was commercially produced starting in December 2007 and is intended for general RF amplifier use within defined operating limits.

Replacement Considerations

Consult the manufacturer's documentation for direct equivalents. Cross-referencing requires matching the SiGe NPN structure, TO-236-3 package, and similar RF parameters such as transition frequency and noise figure.

FAQ

What is the maximum collector-emitter voltage for the MT3S111TU?

The absolute maximum rating for collector-emitter voltage (VCEO) is 6 V.

How does the device perform regarding noise at 1 GHz?

At 1 GHz with VCE=5 V and IC=30 mA, the typical noise figure is 0.85 dB, with a maximum of 1.15 dB.

What is the typical insertion gain at 1 GHz?

The typical insertion gain (|S21e|2) is 12.5 dB at 1 GHz under standard test conditions.