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Product Detailed Parameters
- Description：RF TRANS NPN 5.3V 7.7GHZ PW-MINI
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：5.3V
- Frequency - Transition：7.7GHz
- Noise Figure (dB Typ @ f)：1.45dB @ 1GHz
- Gain：10.5dB
- Power - Max：1.6W
- DC Current Gain (hFE) (Min) @ Ic, Vce：200 @ 30mA, 5V
- Current - Collector (Ic) (Max)：100mA
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-243AA
- Supplier Device Package：PW-MINI
- Grade：-
- Qualification：-
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Overview
The MT3S113P(TE12L,F) is a VHF-UHF band low-noise, low-distortion amplifier transistor manufactured by Toshiba Semiconductor and Storage. It utilizes SiGe technology and features an NPN bipolar configuration within the MT3S113 series. The device operates at frequencies up to 11.2 GHz with a maximum DC collector current of 100 mA and a minimum DC collector/base gain (hFE) of 200. Key electrical ratings include a collector-emitter voltage (VCEO) of 5.3 V, an emitter-base voltage (VEBO) of 600 mW, and a maximum operating temperature of +150°C. It is housed in a UFM-3 surface-mount package.
Feature Summary
- Designed for VHF-UHF band applications requiring low noise and low distortion performance.
- Utilizes SiGe technology for high-frequency operation up to 11.2 GHz.
- Features a single NPN bipolar transistor configuration.
Applications
- Low-noise amplification in VHF-UHF radio frequency circuits
- Low-distortion signal processing in communication systems
Procurement Notes
Verify the specific suffix TE12L,F against official Toshiba documentation to confirm packaging and tape-and-reel specifications. Ensure the component meets RoHS compliance requirements as indicated in the product attributes. Cross-reference the Mouser number 757-mt3s113tulf for accurate sourcing details.
Selection Notes
Select this component for designs requiring high-frequency amplification in the VHF-UHF range. Consider the 5.3 V collector-emitter voltage limit and 100 mA continuous current rating when designing biasing networks. The UFM-3 SMD package requires appropriate footprint design for reliable surface mounting.
Part Context
This part belongs to the MT3S113 series of RF bipolar transistors from Toshiba. The series is characterized by its suitability for VHF-UHF band applications, offering low noise and low distortion figures essential for sensitive receiver front-ends and transmitter stages.
Replacement Considerations
Official substitutes within the same family include the MT3S113TU and MT3S113P. Verify pinout compatibility and package dimensions before substitution.
