MT3S113(TE85L,F)

$0.52

Description：RF TRANS NPN 5.3V 12.5GHZ S MINI
Series：-

SKU:397b990ea526 Category: Bipolar RF Transistors Brand: Toshiba Semiconductor and Storage

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Product introduction

Product Detailed Parameters

Description：RF TRANS NPN 5.3V 12.5GHZ S MINI
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：NPN
Voltage - Collector Emitter Breakdown (Max)：5.3V
Frequency - Transition：12.5GHz
Noise Figure (dB Typ @ f)：1.45dB @ 1GHz
Gain：11.8dB
Power - Max：800mW
DC Current Gain (hFE) (Min) @ Ic, Vce：200 @ 30mA, 5V
Current - Collector (Ic) (Max)：100mA
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-236-3, SC-59, SOT-23-3
Supplier Device Package：S-Mini
Grade：-
Qualification：-

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MT3S113(TE85L,F)

Overview

The MT3S113(TE85L,F) is a Silicon-Germanium NPN epitaxial planar transistor designed for VHF-UHF band applications. It features a transition frequency (fT) of 12.5 GHz and an insertion gain of 11.8 dB at 1 GHz. The device operates with a collector-emitter voltage (VCEO) of 5.3 V and a maximum collector current of 100 mA. Power dissipation reaches 800 mW, while the noise figure is typically 1.15 dB at 1 GHz. It utilizes a TO-236 package.

Feature Summary

Low noise figure performance suitable for sensitive RF front-end stages
High gain characteristics optimized for VHF and UHF amplifier circuits
Silicon-Germanium technology enabling high-frequency operation

Applications

VHF-UHF band low-noise amplifiers
Low-distortion amplifier applications
RF signal processing modules

Procurement Notes

Verify component authenticity through official Toshiba Semiconductor and Storage channels or authorized distributors. Confirm datasheet revision dates and RoHS compliance status prior to integration. Ensure proper electrostatic discharge handling protocols are followed during storage and assembly due to the sensitivity of the high-frequency process.

Selection Notes

Select this component when designing circuits requiring low noise figures around 1 GHz and high linearity. Evaluate thermal management requirements as power dissipation ratings depend on mounting conditions. Compare transition frequency specifications against target operating frequencies to ensure adequate gain margins in the intended application bandwidth.

Part Context

This part belongs to the MT3S113 series of SiGe NPN transistors manufactured by Toshiba Semiconductor and Storage. The TE85L,F suffix indicates specific packaging and environmental compliance attributes within the product lineup. These devices are engineered specifically for radio frequency applications where signal integrity and minimal distortion are critical design parameters.

Replacement Considerations

Consult official Toshiba documentation for verified substitute part numbers. Cross-referencing requires matching transition frequency, noise figure, and package dimensions. Verify that alternative components meet the same absolute maximum ratings and electrical characteristics for direct replacement.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

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Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

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Mode of Transportation

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Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.