MT3S16U(TE85L,F)

MT3S16U(TE85L,F)

$0.20
  • Description:RF TRANS NPN 5V 4GHZ SC-70
  • Series:-

SKU:46b1e8dfaedd Category: Brand:

  
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Product Detailed Parameters

  • Description:RF TRANS NPN 5V 4GHZ SC-70
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):5V
  • Frequency - Transition:4GHz
  • Noise Figure (dB Typ @ f):2.4dB @ 1GHz
  • Gain:4.5dBi
  • Power - Max:100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 1V
  • Current - Collector (Ic) (Max):60mA
  • Operating Temperature:125°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SC-70, SOT-323
  • Supplier Device Package:SC-70
  • Grade:-
  • Qualification:-

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MT3S16U(TE85L,F)

Overview

The MT3S16U(TE85L,F) is a silicon NPN epitaxial planar RF transistor manufactured by Toshiba Semiconductor and Storage. Designed for UHF band oscillator and amplifier applications, it features high transition frequency and flat reverse transfer capacitance characteristics. The device operates in an SC-70 (USM) surface-mount package with three terminals: Base, Emitter, and Collector. Key electrical parameters include a collector-emitter voltage of 5 V, continuous collector current of 60 mA, and power dissipation of 100 mW at 25°C. It achieves a typical noise figure of 2.4 dB and insertion gain of 4.5 dB at 1 GHz.

Feature Summary

  • High transition frequency with excellent current dependability for stable operation.
  • Flat reverse transfer capacitance characteristic to minimize feedback variations.
  • Low noise figure suitable for sensitive receiver front-end stages.

Applications

  • UHF band oscillator circuits
  • RF amplifier stages
  • Low-noise signal processing

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and check for end-of-life notifications as availability may be restricted. Ensure proper electrostatic discharge handling protocols are followed during storage and assembly to prevent damage to the sensitive semiconductor junctions.

Selection Notes

Select this component for designs requiring low noise performance in the UHF spectrum. Verify that the operating voltage remains within the 5 V collector-emitter limit and that thermal management accommodates the 100 mW power dissipation rating. Ensure the SC-70 package footprint matches the PCB layout requirements for reliable surface mounting.

Part Context

This part belongs to the MT3S16 series of silicon NPN transistors optimized for radio frequency applications. It utilizes an epitaxial planar process technology to achieve high-frequency performance. The TE85L suffix indicates specific tape-and-reel packaging configuration for automated surface-mount assembly processes.

Replacement Considerations

Publicly confirmed substitute part numbers include BFR380FH6327XTSA1 from Infineon Technologies and MRF454 from MACOM Technology Solutions. Evaluate these alternatives based on pin compatibility, electrical parameter matching, and package dimensions before implementation.

FAQ

What is the typical noise figure of the MT3S16U?

The typical noise figure is 2.4 dB when measured at VCE = 2 V, IC = 5 mA, and f = 1 GHz.

What is the maximum collector-base voltage rating?

The absolute maximum collector-base voltage (VCBO) rating is 10 V.

How does the reverse transfer capacitance behave?

The reverse transfer capacitance (Cre) characteristic is described as flat, which helps maintain consistent performance across operating conditions.

MT3S16U(TE85L,F)MT3S16U(TE85L,F)
$0.20
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