MT3S20TU(TE85L)

$0.42

Description：RF TRANS NPN 12V 7GHZ UFM
Series：-

SKU:21ccb8c54244 Category: Bipolar RF Transistors Brand: Toshiba Semiconductor and Storage

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Product introduction

Product Detailed Parameters

Description：RF TRANS NPN 12V 7GHZ UFM
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：NPN
Voltage - Collector Emitter Breakdown (Max)：12V
Frequency - Transition：7GHz
Noise Figure (dB Typ @ f)：1.45dB @ 20mA, 5V
Gain：12dB
Power - Max：900mW
DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 50mA, 5V
Current - Collector (Ic) (Max)：80mA
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：3-SMD, Flat Leads
Supplier Device Package：UFM
Grade：-
Qualification：-

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MT3S20TU(TE85L)

Overview

The MT3S20TU(TE85L) is an NPN silicon RF bipolar transistor manufactured by Toshiba Semiconductor and Storage. It operates in the ultra-high frequency band with a transition frequency of 7GHz. The device supports a maximum collector current of 80mA and a collector-emitter breakdown voltage of 12V. Maximum power dissipation is rated at 900mW. It is designed for surface-mount installation in UFM packages, suitable for VHF and UHF radio frequency applications.

Feature Summary

Ultra-high frequency operation up to 7GHz
High power dissipation capability of 900mW
NPN silicon construction for RF amplification

Applications

VHF/UHF radio frequency circuits
RF signal amplification stages
Wireless communication transceivers

Procurement Notes

Verify component authenticity through authorized distributors due to obsolete status. Confirm package integrity upon receipt as surface-mount devices are sensitive to handling. Check datasheet revisions for any parameter updates prior to integration into final designs.

Selection Notes

Select this component for high-frequency RF applications requiring moderate power handling. Ensure thermal management strategies accommodate the 900mW dissipation rating. Compare against newer alternatives if long-term supply continuity is critical for production cycles.

Part Context

This part belongs to Toshiba's discrete semiconductor product line focusing on RF bipolar junction transistors. It complements other models like the MT3S16U within the manufacturer's portfolio for various frequency bands and power levels.

Replacement Considerations

Public confirmed substitutes include BFR380FH6327XTSA1 from Infineon Technologies and MRF454 from MACOM Technology Solutions. Verify pinout compatibility and electrical specifications before substitution.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

Payment methods: T/T, WeChat Pay, credit cards, Google Pay, Apple Pay . Buyer covers shipping, fees, duties, and taxes; contact our product manager if you need a contract/procurement process.

Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

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Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.