MT4S300U(TE85L,O,F

$0.51

Description：RF TRANS NPN 4V 26.5GHZ USQ
Series：-

SKU:695886860712 Category: Bipolar RF Transistors Brand: Toshiba Semiconductor and Storage

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Product introduction

Product Detailed Parameters

Description：RF TRANS NPN 4V 26.5GHZ USQ
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：NPN
Voltage - Collector Emitter Breakdown (Max)：4V
Frequency - Transition：26.5GHz
Noise Figure (dB Typ @ f)：0.55dB @ 2GHz
Gain：16.9dB
Power - Max：250mW
DC Current Gain (hFE) (Min) @ Ic, Vce：200 @ 10mA, 3V
Current - Collector (Ic) (Max)：50mA
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SC-82A, SOT-343
Supplier Device Package：USQ
Grade：-
Qualification：-

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MT4S300U(TE85L,O,F

Overview

The MT4S300U(TE85L,O,F) is a Silicon-Germanium (SiGe) heterojunction bipolar transistor (HBT) manufactured by Toshiba Semiconductor and Storage. It features an NPN configuration housed in a surface-mount SC-82A (SOT-343) package. Key electrical specifications include a collector-emitter breakdown voltage of 4V, a maximum collector current of 50mA, and a transition frequency of 26.5GHz. The device supports a maximum power dissipation of 250mW and operates at junction temperatures up to 150°C. It exhibits a typical noise figure of 1.5dB and offers a gain of 16.9dB.

Feature Summary

Utilizes SiGe HBT technology for high-frequency performance
Designed for low-voltage operation with 4V breakdown rating
Optimized for ultra-high frequency applications up to 26.5GHz
Compact surface-mount packaging suitable for space-constrained designs

Applications

Wireless communication systems
RF signal amplification
Mobile phone front-end modules
High-speed data transmission circuits

Procurement Notes

Verify component authenticity through authorized distributors due to obsolete status. Confirm RoHS compliance and lead-free specifications during sourcing. Check for valid replacement part numbers as original stock may be depleted. Ensure handling procedures meet ESD protection standards for sensitive semiconductor devices.

Selection Notes

Select this component for applications requiring high gain and low noise at microwave frequencies. Consider the 4V limit when designing power supply rails. Evaluate thermal management requirements given the 250mW dissipation capability. Compare against alternative SiGe transistors if higher voltage tolerance is needed.

Part Context

This part belongs to Toshiba's RF transistor portfolio, specifically utilizing SiGe technology for enhanced speed and linearity. It serves as a specialized discrete component for radio frequency engineering, distinct from standard silicon BJTs or integrated RF ICs.

Replacement Considerations

Public confirmed substitutes include BFR380FH6327XTSA1 and MRF454. Verify pinout compatibility and electrical parameter alignment before substitution.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

Payment methods: T/T, WeChat Pay, credit cards, Google Pay, Apple Pay . Buyer covers shipping, fees, duties, and taxes; contact our product manager if you need a contract/procurement process.

Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

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Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.