MTC120WX75GD-SMD

FET, MOSFET Arrays Overview

The MTC120WX75GD-SMD is a six-channel N-channel MOSFET array designed for surface-mount applications. It features a maximum drain-source voltage of 75V and a continuous drain current of 180A at case temperature. The device utilizes the ISOPLUS-DIL package to provide high power density. Key electrical parameters include a maximum gate threshold voltage of 4V at 1mA, a typical on-resistance of 3.1 milliohms at 100A and 10V, and a maximum gate charge of 178nC at 10V. Input capacitance is specified at 10500pF at 25V. The component operates within a junction temperature range of -55°C to 175°C.

FET, MOSFET Arrays Feature Summary

• Six-channel N-channel configuration arranged in a three-phase bridge topology
• ISOPLUS-DIL surface mount packaging for enhanced thermal management
• Low on-resistance characteristics supporting high current handling capabilities

FET, MOSFET Arrays Applications

• Three-phase motor drive systems
• High-density power supply inverters
• Industrial motor control circuits

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix GD against official IXYS documentation to confirm exact pinout and thermal pad configuration. Ensure the ordering part number matches the required ISOPLUS-DIL variant. Cross-reference datasheet revisions to confirm compliance with RoHS3 standards and check for any recent package label changes or material updates that may affect mechanical integration.

FET, MOSFET Arrays Selection Notes

Select this component when a compact six-switch solution is required for low-voltage, high-current applications. The ISOPLUS-DIL package offers superior thermal performance compared to standard DIP options. Evaluate the 75V rating against system bus voltages to ensure adequate headroom. Consider the 180A current capacity relative to peak load requirements and verify that the PCB layout supports the necessary thermal dissipation for the surface-mount form factor.

FET, MOSFET Arrays Part Context

This device belongs to the MTC120 series of multi-channel MOSFET arrays from IXYS. These modules are engineered to replace discrete transistor setups in power electronics. The six-pack architecture simplifies circuit design by integrating all switches into a single component. This reduces board space and interconnection complexity in modern power conversion systems.

FET, MOSFET Arrays Replacement Considerations

Direct replacements must match the 75V/180A specifications and ISOPLUS-DIL footprint. Verify compatibility with existing gate drive signals due to potential variations in gate charge and threshold voltage among alternative manufacturers.