Single FETs, MOSFETs MTD3N25E product image

MTD3N25E

$0.27
  • Description:N-CHANNEL POWER MOSFET
  • Series:-
  • Mfr:Motorola
  • Package:Bulk

SKU:1fc9972b1cb0 Category: Brand:

  
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MTD3N25E is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Motorola. Its product description is N-CHANNEL POWER MOSFET. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for MTD3N25E

  • Description:N-CHANNEL POWER MOSFET
  • Series:-
  • Mfr:Motorola
  • Package:Bulk
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):250 V
  • Current - Continuous Drain (Id) @ 25°C:3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:1.4Ohm @ 1.5A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:430 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):40W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:DPAK-3
  • Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for MTD3N25E

MTD3N25E

Single FETs, MOSFETs Overview

The MTD3N25E is an N-channel power MOSFET manufactured by Motorola. It features a drain-source voltage (Vdss) of 250V and a continuous drain current (Id) of 3A at case temperature. The device exhibits a maximum on-resistance (RDS(on)) of 1.4Ω when tested at Vgs=10V and Id=1.5A. It is housed in a surface-mount DPAK-3 package, designed for efficient thermal management with a power dissipation rating of 40W at case temperature.

Single FETs, MOSFETs Feature Summary

  • High-voltage capability with 250V drain-source breakdown
  • Surface-mount DPAK-3 packaging for compact integration
  • Optimized low on-resistance for improved efficiency

Single FETs, MOSFETs Applications

  • DC-DC converter circuits
  • Motor control systems
  • Power switching applications

Single FETs, MOSFETs Procurement Notes

Verify the manufacturer designation as Motorola or its successor entities during sourcing. Confirm the specific datasheet revision matches the required electrical characteristics. Ensure the DPAK-3 package variant aligns with PCB footprint specifications. Cross-reference part numbers to avoid confusion with similar TMOS series components.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring 250V blocking voltage and moderate current handling up to 3A. The DPAK-3 package suits designs needing surface-mount solutions with adequate thermal performance. Evaluate RDS(on) requirements against the 1.4Ω specification at 10V gate drive to ensure compatibility with control logic levels.

Single FETs, MOSFETs Part Context

This device belongs to Motorola's TMOS Power FET family, characterized by high voltage ratings and robust construction. The MTD3N25E specifically targets medium-power switching needs within the 250V class, offering a balance between conduction losses and switching performance for industrial electronics.

Single FETs, MOSFETs Replacement Considerations

Consult official substitution guides for equivalent N-channel MOSFETs with matching 250V Vdss and comparable RDS(on). Verify pinout compatibility for DPAK-3 packages before implementation.

Single FETs, MOSFETs FAQ

What is the maximum drain-source voltage for the MTD3N25E?

The maximum drain-source voltage (Vdss) is 250V.

What is the package type for this component?

The MTD3N25E utilizes a DPAK-3 surface-mount package.

MTD3N25EMTD3N25E
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