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MTD3N25E1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 250V 3A. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for MTD3N25E1
- Description：MOSFET N-CH 250V 3A
- Series：*
- Mfr：onsemi
- Package：Bulk
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for MTD3N25E1
FET, MOSFET Arrays Overview
The MTD3N25E1 is an N-channel enhancement mode power MOSFET manufactured by onsemi. It features a maximum drain-source voltage of 250V and a continuous drain current rating of 3A. The device is housed in a TO-92 (TO-226AA) three-lead package, designed for surface-mount or through-hole applications requiring compact form factors. Key electrical characteristics include a low on-state resistance to minimize conduction losses and robust avalanche energy ratings for reliable operation in inductive load switching scenarios.
FET, MOSFET Arrays Feature Summary
- Enhancement mode N-channel construction for efficient switching control
- Low thermal resistance structure suitable for compact power management designs
- Rugged avalanche-rated capability for handling inductive load transients
FET, MOSFET Arrays Applications
- DC-DC converter circuits
- Motor driver interfaces
- Power switching modules
FET, MOSFET Arrays Procurement Notes
Verify the specific ordering suffix against official onsemi documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the TO-92 package variant matches the required mechanical footprint for the target PCB layout. Cross-reference the datasheet revision date to ensure compliance with current RoHS and halogen-free standards before finalizing component selection.
FET, MOSFET Arrays Selection Notes
Select this component when a 250V breakdown voltage and 3A continuous current capacity are required within a small TO-92 package. Evaluate the on-resistance parameters against the system's efficiency targets and thermal dissipation constraints. Ensure the gate threshold voltage aligns with the available logic levels for driving the switch effectively in the intended application circuit.
FET, MOSFET Arrays Part Context
This part belongs to onsemi's discrete semiconductor transistor portfolio, specifically within the single FET and MOSFET categories. It serves as a standard switching element for general-purpose power electronics, complementing the manufacturer's broader range of power management and signal conditioning solutions used in industrial and consumer electronic systems.
FET, MOSFET Arrays Replacement Considerations
Consult official cross-reference lists for direct equivalents. Verify pinout compatibility and thermal performance metrics when substituting with other 250V N-channel MOSFETs in the TO-92 package to maintain circuit integrity.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
