MTM78E2B0LBF

FET, MOSFET Arrays Overview

The MTM78E2B0LBF is a dual N-channel MOS FET manufactured by Nuvoton Technology Corporation Japan (NTCJ), formerly Panasonic Semiconductor Solutions. It features an integrated gate resistor of 1 kΩ for each channel and is housed in a WSMini8-F1-B package. The device has a drain-source voltage rating of 20 V and a continuous drain current of 4 A at 25°C. Key electrical parameters include a typical drain-source on-state resistance of 21.5 mΩ at VGS = 4.0 V, a gate threshold voltage ranging from 0.85 V to 1.30 V at ID = 1.0 mA, and a total power dissipation of 150 mW without a heat sink.

FET, MOSFET Arrays Feature Summary

• Dual N-Channel configuration with built-in 1 kΩ gate resistors for each channel
• Low drain-source on-state resistance optimized for high efficiency
• Halogen-free and RoHS compliant construction
• Designed specifically for lithium-ion secondary battery protection circuits

FET, MOSFET Arrays Applications

• Lithium-ion secondary battery protection circuits
• General office equipment
• Communication equipment
• Measuring instruments
• Household appliances

FET, MOSFET Arrays Procurement Notes

Verify the manufacturer origin carefully, as the semiconductor business was transferred to Nuvoton Technology Corporation Japan (NTCJ) effective September 1, 2020. Products sold under the Panasonic brand after this date are technically NTCJ-made. Confirm that the specific unit matches the required NTCJ specifications and documentation standards rather than legacy Panasonic data sheets.

FET, MOSFET Arrays Selection Notes

Select this component when a compact dual N-channel solution with integrated gate resistors is required. Ensure the application operates within the 20 V drain-source voltage limit and 4 A continuous current rating. Verify that the thermal environment allows for the specified 150 mW power dissipation or provides adequate copper area on the PCB to manage heat effectively.

FET, MOSFET Arrays Part Context

This component belongs to the MTM series of MOS FETs produced by Nuvoton Technology Corporation Japan. The series is characterized by low on-resistance and small form factors suitable for portable electronics. The product line transitioned from Panasonic to NTCJ following the corporate restructuring of the semiconductor division in 2020.

FET, MOSFET Arrays Replacement Considerations

Consult official NTCJ catalogs for direct substitutes within the MTM series. Cross-referencing with other manufacturers requires verifying pin compatibility, absolute maximum ratings, and electrical characteristics such as RDS(on) and Vth against the original datasheet specifications.