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The MUBW25-06A6K is a silicon-based Insulated Gate Bipolar Transistor (IGBT) module manufactured by IXYS. It features a three-phase bridge configuration housed in an E1 package with screw mount installation style. The device supports a collector-emitter voltage of 600V and a continuous collector current of 25A at 25°C. It operates within a junction temperature range of -40°C to +125°C. The module utilizes standard silicon technology and is supplied in bulk packaging.
This component is officially listed as End-of-Life (EOL) or discontinued by the manufacturer. Verification of availability requires checking authorized distributors for remaining stock or obsolete inventory. Buyers must confirm the specific revision level and authenticity through official datasheets before procurement, as supply chain status may vary across regions.
Select this module for applications requiring a 600V, 25A three-phase rectifier or inverter stage. Ensure the thermal management system can handle the specified thermal resistance values found in the datasheet. Verify that the E1 package dimensions fit the mechanical constraints of the heat sink assembly. Consider the operating temperature range limits when designing for extreme environmental conditions.
The MUBW25-06A6K belongs to the MUBW25 series of discrete semiconductor modules from IXYS. This series typically includes various voltage and current ratings within the same E1 package footprint, allowing for design flexibility. The part represents a legacy product line now managed under Littelfuse following corporate acquisitions.
Verify cross-reference compatibility with other 600V, 25A three-phase IGBT modules from manufacturers such as Infineon or Semikron. Check pinout definitions and thermal characteristics carefully, as physical dimensions may differ even if electrical ratings are similar.