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The MUBW35-06A6K is a Power Integrated Module (PIM) manufactured by IXYS, designed for three-phase power conversion applications. It integrates six discrete semiconductor components into a single compact unit: three Insulated Gate Bipolar Transistors (IGBTs) and three Fast Recovery Diodes. The module features a 600V collector-emitter breakdown voltage rating and supports a continuous collector current of 35A. Constructed using silicon technology, it utilizes the E1 package format with screw-mount installation capabilities. The device operates within a junction temperature range of -40°C to +125°C, ensuring reliability in industrial environments.
Verify component authenticity through authorized IXYS distributors or certified partners. Confirm RoHS compliance status and check for end-of-life notifications, as older PIM series may be discontinued. Ensure thermal interface materials are compatible with the E1 package base plate specifications before assembly.
Select this module when a compact solution for three-phase rectification or inversion is required at 600V and 35A levels. Compare thermal resistance values against system cooling capabilities. Verify that the gate drive requirements align with standard IGBT control voltages. Consider mechanical constraints regarding the E1 footprint and screw mounting torque specifications.
This component belongs to the IXYS MUBW series of Power Integrated Modules. These modules combine multiple power devices to reduce board space and simplify assembly compared to discrete solutions. The MUBW series is widely used in medium-power industrial applications where reliability and thermal management are critical design factors.
Direct pin-to-pin replacements may not exist due to specific internal die configurations. Evaluate equivalent PIMs from manufacturers like Infineon or Semikron with matching 600V/35A ratings and E1-compatible footprints. Verify electrical parameters such as Vce(sat) and reverse recovery time to ensure circuit compatibility.