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Product Detailed Parameters
- Description：DIODE MODULE GP 50V 50A 2TOWER
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Diode Configuration：1 Pair Common Anode
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：50 V
- Current - Average Rectified (Io) (per Diode)：50A
- Voltage - Forward (Vf) (Max) @ If：1.3 V @ 50 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：75 ns
- Current - Reverse Leakage @ Vr：25 µA @ 50 V
- Operating Temperature - Junction：-55°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Twin Tower
- Supplier Device Package：Twin Tower
- Grade：-
- Qualification：-
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Overview
The MUR10005CTR is a silicon super fast recovery diode module from the MUR100 series, manufactured by GeneSiC Semiconductor. It features a Twin Tower package with screw mount installation and reversed leads for the 'R' suffix variant. The device supports an average forward current of 100 A per package and a peak forward surge current of 1500 A per leg. It offers a repetitive peak reverse voltage (VRRM) of 50 V, with maximum instantaneous forward voltage of 1.0 V and maximum reverse recovery time of 75 ns. Operating temperature ranges from -55°C to +150°C.
Feature Summary
- High surge capability designed for demanding power applications
- Twin Tower package configuration for efficient thermal management
- Super fast recovery characteristics minimizing switching losses
- Not ESD sensitive for simplified handling
Applications
- High frequency DC-DC converters
- Free wheeling rectification in motor drives
- Isolated power supply output rectification
Procurement Notes
Verify the specific part number against official datasheets to confirm lead orientation, as the 'R' suffix indicates reversed leads compared to standard variants. Confirm thermal resistance requirements match your heatsink design, noting the junction-to-case value is 1.0 °C/W per leg. Ensure the operating voltage does not exceed the 50 V rating under all transient conditions.
Selection Notes
Select this component when high current capacity and fast switching speeds are required in a robust mechanical package. The Twin Tower design facilitates easy mounting and heat dissipation. Consider the reversed lead configuration if board layout constraints require it. Compare thermal performance against similar modules in the MUR100 series based on specific voltage ratings.
Part Context
This module belongs to the MUR100 series of silicon super fast recovery diodes. The series includes various voltage ratings from 50 V to 200 V, all sharing the same 100 A current rating and physical package dimensions. The MUR10005CT specifically denotes the 50 V version within this family.
Replacement Considerations
Compatible substitutes include other MUR100 series variants such as MUR10010CT or MUR10020CT, provided the reverse voltage rating meets the circuit requirements. Verify that the replacement maintains the same Twin Tower package and electrical characteristics like Trr and IF(AV).
