ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：DIODE MODULE GP 100V 50A 2TOWER
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Diode Configuration：1 Pair Common Anode
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：100 V
- Current - Average Rectified (Io) (per Diode)：50A
- Voltage - Forward (Vf) (Max) @ If：1.3 V @ 50 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：75 ns
- Current - Reverse Leakage @ Vr：25 µA @ 50 V
- Operating Temperature - Junction：-55°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Twin Tower
- Supplier Device Package：Twin Tower
- Grade：-
- Qualification：-
Download product information
Overview
The GeneSiC Semiconductor MUR10010CTR is a silicon super fast recovery diode module featuring a Twin Tower package. It provides a repetitive peak reverse voltage of 100 V and an average forward current of 100 A per package. The device exhibits a maximum reverse recovery time of 75 ns and a maximum instantaneous forward voltage of 1.0 V at 50 A. It supports a peak forward surge current of 1500 A and operates within a junction temperature range of -55°C to 150°C.
Feature Summary
- Super fast recovery characteristics with 75 ns maximum reverse recovery time
- High surge capability supporting 1500 A peak forward surge current
- Electrically isolated Twin Tower package design
Applications
- High frequency switching power supplies
- Free wheeling rectification in DC-DC converters
- Inverter circuits requiring fast recovery performance
Procurement Notes
Verify the specific datasheet for the MUR10010CTR variant, as the 'CTR' suffix indicates reversed leads compared to standard versions. Confirm thermal resistance values and mounting requirements against the official GeneSiC documentation before integration. Ensure lead configuration matches the target PCB layout to prevent installation errors.
Selection Notes
Select this component for applications requiring high current handling with minimal reverse recovery losses. The 100 A rating suits medium-to-high power designs. Consider the Twin Tower package for efficient heat dissipation and secure screw mounting. Verify that the 100 V blocking voltage aligns with the circuit's peak inverse voltage requirements.
Part Context
This part belongs to the MUR100 series of silicon super fast recovery diodes from GeneSiC Semiconductor. The series offers various voltage ratings from 50 V to 200 V while maintaining consistent 100 A current capabilities. These modules are designed for robust performance in demanding power electronics environments.
Replacement Considerations
Compatible substitutes include other 100 A, 100 V super fast recovery diodes in Twin Tower packages. Verify matching electrical parameters such as Trr and Vf. Ensure the replacement part has identical terminal configurations or adapt the mounting scheme accordingly.
