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Product Detailed Parameters
- Description：DIODE MODULE GP 600V 50A 2TOWER
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Diode Configuration：1 Pair Common Anode
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：600 V
- Current - Average Rectified (Io) (per Diode)：50A
- Voltage - Forward (Vf) (Max) @ If：1.7 V @ 50 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：110 ns
- Current - Reverse Leakage @ Vr：25 µA @ 50 V
- Operating Temperature - Junction：-55°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Twin Tower
- Supplier Device Package：Twin Tower
- Grade：-
- Qualification：-
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Overview
The MUR10060CTR is a silicon super fast recovery diode module manufactured by GeneSiC Semiconductor. It features a twin tower package configuration with one pair of common cathode diodes. The device supports a repetitive peak reverse voltage (VRRM) of 600 V and an average forward current (IF(AV)) of 100 A per leg. Key electrical characteristics include a maximum instantaneous forward voltage of 1.7 V at 50 A, a maximum reverse recovery time of 110 ns, and a peak forward surge current capability of 1500 A. The operating junction temperature range spans from -55°C to +150°C.
Feature Summary
- High surge current capability for robust transient handling
- Twin tower package design for efficient mounting
- Super fast recovery characteristics suitable for high-frequency applications
Applications
- High frequency switching power supplies
- Inverter circuits
- Free wheeling rectification in motor drives
Procurement Notes
Verify the specific suffix 'CTR' against official documentation to confirm lead orientation or pinout variations compared to standard variants. Confirm that the manufacturer designation aligns with current corporate structures following industry acquisitions. Ensure thermal management requirements match the specified junction-to-case thermal resistance values provided in the datasheet.
Selection Notes
Select this component when a 600 V rating and 100 A continuous current capacity are required in a twin tower form factor. Consider the 110 ns reverse recovery time for efficiency in high-speed switching environments. Evaluate the 1.7 V forward voltage drop impact on system thermal performance under full load conditions relative to alternative technologies.
Part Context
This part belongs to the MUR100 series of silicon super fast recovery diodes produced by GeneSiC Semiconductor. The series offers various voltage ratings ranging from 400 V to 600 V while maintaining consistent current handling capabilities. GeneSiC Semiconductor has been acquired by Navitas Semiconductor, which may influence future production and support channels for this legacy silicon product line.
Replacement Considerations
Direct substitutes within the same family include MUR10040CTR and MUR10060CT. Verify compatibility regarding reverse recovery time and forward voltage specifications when cross-referencing with other manufacturers' super fast recovery diode modules.
