MUR1620CT

Overview

The MUR1620CT is an ultrafast dual diode with soft recovery characteristics, featuring a reverse voltage of 200 V and an average rectified forward current of 8 A per leg. It utilizes silicon nitride passivated ion-implanted epitaxial planar construction to minimize stored charge and electrical noise. The device operates within a temperature range of -65°C to +175°C and includes avalanche energy rating capabilities.

Feature Summary

• Ultrafast soft recovery characteristics
• Silicon nitride passivated ion-implanted epitaxial planar construction
• Avalanche energy rated

Applications

• Switching power supplies
• Power switching circuits
• Freewheeling/clamping diodes

Procurement Notes

Verify the manufacturer origin, as the datasheet indicates Fairchild Semiconductor while other sources list onsemi. Confirm the package type matches TO-220AB requirements. Ensure the specific ordering suffix aligns with the required packaging configuration for your assembly process.

Selection Notes

Select this component for applications requiring low stored charge and minimal ringing in power switching circuits. The 200V rating and 8A current capacity suit general-purpose high-frequency rectification. Verify thermal management needs given the 175°C maximum junction temperature capability.

Part Context

This part belongs to the MUR series of ultrafast rectifiers designed for high-efficiency power conversion. Originally developed by Fairchild Semiconductor, it serves as a robust solution for reducing power loss in switching transistors through its fast recovery profile.

Replacement Considerations

RURP820CC is a documented equivalent part number from the same manufacturer family sharing identical specifications and packaging.