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Product Detailed Parameters
- Description：DIODE MODULE GP 100V 100A 2TOWER
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Diode Configuration：1 Pair Common Cathode
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：100 V
- Current - Average Rectified (Io) (per Diode)：100A
- Voltage - Forward (Vf) (Max) @ If：1.3 V @ 100 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：75 ns
- Current - Reverse Leakage @ Vr：25 µA @ 50 V
- Operating Temperature - Junction：-55°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Twin Tower
- Supplier Device Package：Twin Tower
- Grade：-
- Qualification：-
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Overview
The MUR20010CT is a silicon super fast recovery diode module manufactured by GeneSiC Semiconductor. It features a Twin Tower package configuration with an average forward current rating of 200 A per package and a peak forward surge current capability of 2000 A per leg. The device supports a repetitive peak reverse voltage of 100 V, with maximum instantaneous forward voltage of 1.0 V and a maximum reverse recovery time of 75 ns. Operating temperatures range from -55 °C to +150 °C, and the junction-to-case thermal resistance is 0.45 °C/W.
Feature Summary
- High surge current capability for robust operation under transient loads
- Twin Tower package design for efficient mounting and heat dissipation
- Super fast recovery characteristics suitable for high-frequency switching applications
Applications
- High-power DC-DC converters
- Induction heating systems
- Uninterruptible power supplies (UPS)
- Motor drive circuits
Procurement Notes
Verify the specific part number suffix against official documentation to confirm lead orientation and exact electrical ratings. Confirm that the manufacturer designation aligns with current corporate structures following industry acquisitions. Ensure compliance with RoHS directives and check for any discontinuation notices prior to finalizing procurement orders.
Selection Notes
Select this component based on its 200 A current handling capacity and 100 V voltage rating requirements. Evaluate the 0.45 °C/W thermal resistance to ensure adequate heatsinking solutions are available. Consider the 75 ns reverse recovery time for compatibility with the target switching frequency and circuit topology constraints.
Part Context
This module belongs to the MUR200 series of silicon super fast recovery diodes. The series includes variants with different voltage ratings ranging from 50 V to 200 V, all sharing the same 200 A current rating and Twin Tower package form factor. These modules are designed for high-performance power conversion applications requiring low reverse recovery charge.
Replacement Considerations
Direct replacements within the same series include MUR20005CT and MUR20020CT, provided voltage ratings match the application requirements. Verify pinout compatibility and thermal interface dimensions when substituting.
