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The MUR2X030A10 is a super fast recovery rectifier module manufactured by GeneSiC Semiconductor. It features an average forward current of 60 A and a maximum repetitive peak reverse voltage of 1000 V. The device utilizes an electrically isolated SOT-227 package with a base plate isolation voltage of 2500 V. Key electrical parameters include a maximum instantaneous forward voltage of 2.35 V per leg, a peak forward surge current of 400 A, and a maximum reverse recovery time of 85 ns. The junction-to-case thermal resistance is 1.2 °C/W. Operating temperatures range from -55 °C to +175 °C.
Verify the manufacturer designation on official documentation, as distributor listings may attribute this component to Navitas Semiconductor due to corporate acquisitions. Confirm the specific datasheet version matches the required electrical tolerances and thermal specifications before finalizing procurement orders.
Select this component for applications requiring high voltage blocking capabilities combined with fast switching speeds. The SOT-227 package facilitates screw mounting for effective heat dissipation. Ensure the system operates within the specified thermal limits to maintain reliability during continuous conduction periods.
This part belongs to the MUR2X series of silicon super fast recovery rectifier modules. These components are designed for general purpose high voltage rectification in industrial and commercial power electronics. The series offers various current and voltage ratings to suit different circuit requirements.
Consult official cross-reference lists for verified substitutes. Generic replacements must match the 1000 V rating, 60 A current capacity, and SOT-227 package dimensions to ensure mechanical and electrical compatibility.
The maximum junction temperature is 175 °C.
Yes, it features an electrically isolated base plate with an isolation voltage of 2500 V.
The peak forward surge current is 400 A per leg under half-sine wave conditions.