MUR30060CTR

$83.93

Description：DIODE MODULE GP 600V 150A 2TOWER
Series：-

SKU:218b3a491549 Category: Diode Arrays Brand: GeneSiC Semiconductor

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Product introduction

Product Detailed Parameters

Description：DIODE MODULE GP 600V 150A 2TOWER
Series：-
Mfr：GeneSiC Semiconductor
Package：Bulk
Diode Configuration：1 Pair Common Anode
Technology：Standard
Voltage - DC Reverse (Vr) (Max)：600 V
Current - Average Rectified (Io) (per Diode)：150A
Voltage - Forward (Vf) (Max) @ If：1.7 V @ 100 A
Speed：Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)：90 ns
Current - Reverse Leakage @ Vr：25 µA @ 50 V
Operating Temperature - Junction：-55°C ~ 150°C
Mounting Type：Chassis Mount
Package / Case：Twin Tower
Supplier Device Package：Twin Tower
Grade：-
Qualification：-

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MUR30060CTR

Overview

The MUR30060CTR is a silicon super fast recovery diode module manufactured by GeneSiC Semiconductor. It features a Twin Tower package with screw mount installation. The device supports a repetitive peak reverse voltage of 600 V and an average forward current of 300 A per package. Key electrical parameters include a maximum instantaneous forward voltage of 1.7 V, a maximum reverse recovery time of 150 ns, and a thermal resistance from junction to case of 0.40 °C/W per leg. The operating temperature range spans from -55 °C to +150 °C.

Feature Summary

High surge capability designed for robust power applications
Twin Tower package configuration for efficient mounting
Super fast recovery characteristics for high-frequency switching

Applications

High frequency inverters
Free wheeling rectification in DC-DC converters
Pulse width modulation (PWM) motor drives

Procurement Notes

Verify the specific part number against official manufacturer documentation before procurement. Confirm that the component matches the required Twin Tower package and terminal configuration. Check for any regional shipping restrictions or compliance requirements associated with the product. Ensure that the sourcing channel provides valid traceability for this discontinued series item.

Selection Notes

Select this component based on its 600 V rating and 300 A current capacity. Consider the 150 ns reverse recovery time for high-speed switching requirements. Evaluate the thermal management needs relative to the 0.40 °C/W junction-to-case resistance. Verify compatibility with the Twin Tower mounting style and screw installation method for the target system design.

Part Context

This module belongs to the MUR300 series of silicon super fast recovery diodes. The series includes variants with different voltage ratings ranging from 400 V to 600 V. All models share similar physical dimensions and electrical characteristics, differing primarily in their peak reverse voltage specifications. The CTR suffix indicates a specific terminal configuration within this family.