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The GeneSiC Semiconductor MUR40040CT is a silicon super fast recovery diode module featuring a twin tower package. It provides a repetitive peak reverse voltage of 400 V and an average forward current rating of 400 A per package. The device supports a peak forward surge current of 3300 A per leg with a maximum reverse recovery time of 180 ns. Thermal resistance from junction to case is 0.35 °C/W per leg, operating within a temperature range of -55 to 150 °C.
Verify the specific datasheet revision and manufacturer documentation before procurement. Confirm terminal configurations and lead orientations match the design requirements. Ensure thermal management solutions align with the specified junction-to-case thermal resistance values for reliable operation under load conditions.
Select this component when high average current handling and fast recovery times are required in a robust twin tower package. Evaluate thermal performance against system heat dissipation capabilities. Consider the 400 V blocking voltage suitability for the target circuit topology and ensure compatibility with existing mounting hardware.
This part belongs to the MUR400 series of silicon super fast recovery diode modules. The series offers various voltage ratings from 400 V to 600 V while maintaining consistent current handling capabilities. These modules are engineered for high reliability in industrial and commercial power conversion systems.
Consult official cross-reference lists for verified substitutes. Ensure replacement parts match the 400 V rating, 400 A current capacity, and twin tower package dimensions.