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The MURD620CT is a dual ultrafast recovery rectifier manufactured by Vishay General Semiconductor - Diodes Division. It features a peak repetitive reverse voltage of 200 V and an average rectified forward current of 6 A per device at a case temperature of 146°C. The component operates within a junction and storage temperature range of -65 to 175 °C. Key electrical characteristics include a maximum forward voltage drop of 1.2 V at 6 A, a typical reverse recovery time of 25 ns, and a non-repetitive peak surge current rating of 50 A.
Verify the specific suffix (TR, TRL, TRR) when ordering to confirm tape and reel orientation, as quantities vary by orientation type. Confirm that the datasheet reflects post-acquisition specifications from Vishay Intertechnology, Inc., following the acquisition of International Rectifier's Power Control Systems business. Ensure industrial level qualification standards are met for the intended application environment.
Select this component for applications requiring fast switching speeds and high thermal stability. The dual configuration allows for center-tapped transformer designs or full-wave bridge configurations using a single package. Evaluate thermal resistance values against the expected ambient conditions to ensure the junction temperature remains within the specified -65 to 175 °C range during operation.
This part belongs to the MUR series of ultrafast recovery rectifiers, originally developed by International Rectifier before being acquired by Vishay. The series is characterized by its planar structure and optimized performance in terms of forward voltage drop and recovery time. The MURD620CT specifically utilizes a D-Pak surface mount package to provide efficient heat dissipation and compact footprint solutions for power electronics.
MURD620CTR
The typical reverse recovery time is 25 ns under standard test conditions.
The dual common cathode configuration in the D-Pak package allows for use in center-tapped rectifier circuits or as a single-phase full-wave bridge when paired with complementary devices.
The maximum junction temperature range extends up to 175 °C.