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Product Detailed Parameters
- Description：DIODE MODULE GP 200V 200A TO-244
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Diode Configuration：1 Pair Common Anode
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：200 V
- Current - Average Rectified (Io) (per Diode)：200A
- Voltage - Forward (Vf) (Max) @ If：1 V @ 200 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：150 ns
- Current - Reverse Leakage @ Vr：25 µA @ 200 V
- Operating Temperature - Junction：-55°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：TO-244AB
- Supplier Device Package：TO-244
- Grade：-
- Qualification：-
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Overview
The MURF40020R is a silicon super fast recovery diode manufactured by GeneSiC Semiconductor. It is housed in a TO-244 package and designed for general-purpose applications. The component features a reverse voltage of 200V and a forward current rating of 200A.
Feature Summary
- Utilizes silicon super fast recovery technology for efficient switching performance.
- Designed for general-purpose rectification tasks requiring high current handling.
Applications
- General-purpose rectification
- High-frequency switching circuits
- Power supply modules
Procurement Notes
Verify the exact datasheet specifications against the manufacturer's official documentation before integration. Confirm that the TO-244 package dimensions and thermal characteristics align with your PCB layout and heatsinking requirements. Ensure the 200V and 200A ratings meet the circuit's peak and continuous load demands to prevent device failure.
Selection Notes
Select this component when a silicon-based solution with super fast recovery characteristics is required for general-purpose applications. The 200A current capacity and 200V blocking voltage make it suitable for medium-power circuits. Consider the TO-244 package for screw-mount or board-mount implementations where thermal management is critical for sustained operation at high currents.
Part Context
This part belongs to the MURF series of silicon super fast recovery diodes from GeneSiC Semiconductor. It is distinct from the company's silicon carbide (SiC) MOSFET and Schottky diode lines, such as the G3R and MBR series. The MURF series focuses on traditional silicon performance optimized for speed and high-current rectification in standard power electronics.
FAQ
What is the maximum operating junction temperature for the MURF40020R?
Specific thermal limits are defined in the official datasheet; verify the maximum junction temperature rating from the manufacturer's document before design.
Is the MURF40020R available in a surface-mount package?
The component is specified in a TO-244 package, which typically supports through-hole or specific board-mount configurations rather than standard surface-mount techniques.
