MURT10005R

Overview

The MURT10005R is a silicon super fast recovery diode module from the MURT100 series, manufactured by GeneSiC Semiconductor. It features a three-tower package with an electrically isolated base plate and reversed leads for the 'R' variant. The device supports a repetitive peak reverse voltage (VRRM) of 50 V and an average forward current (IF(AV)) of 100 A per package. Key electrical parameters include a maximum instantaneous forward voltage of 1.0 V, a peak forward surge current (IFSM) of 1500 A, and a maximum reverse recovery time (Trr) of 75 ns. The junction-to-case thermal resistance is 1.0 °C/W, and it operates within a temperature range of -55°C to +150°C.

Feature Summary

• High surge capability with a peak forward surge current rating of 1500 A
• Electrically isolated base plate providing isolation type packaging
• Super fast recovery characteristics with a maximum reverse recovery time of 75 ns

Applications

• High frequency switching power supplies
• Inverter circuits in motor drives
• DC-DC converter modules requiring high current handling

Procurement Notes

Verify the specific voltage rating matches the application requirement, as the MURT100 series spans 50 V to 200 V. Confirm the 'R' suffix indicates reversed leads if terminal orientation is critical for the PCB layout. Ensure the thermal management design accounts for the 1.0 °C/W junction-to-case resistance at the expected operating temperature. Check RoHS compliance status via official documentation before integration.

Selection Notes

Select this component when a high-current, single-phase rectifier with fast recovery is needed in a compact, isolated package. The 100 A rating suits medium-power industrial applications. Consider the MURT10010 or higher variants if the system requires higher reverse voltage blocking capabilities while maintaining similar current and thermal characteristics.

Part Context

This part belongs to the MURT100 series of silicon super fast recovery diodes. The series utilizes a three-tower package design available in various voltage ratings from 50 V to 200 V. The 'R' designation specifically denotes devices with reversed lead configurations compared to standard versions, facilitating different mounting orientations in power electronics assemblies.

Replacement Considerations

Direct substitutes within the same series include MURT10010R and MURT10020R for higher voltage requirements. Cross-brand replacements must match the 100 A current, 75 ns recovery time, and three-tower isolated package dimensions.