MURT10010R

Overview

The GeneSiC Semiconductor MURT10010R is a silicon super fast recovery diode module featuring an electrically isolated three-tower package. It provides a repetitive peak reverse voltage of 100 V and supports an average forward current of 100 A per package. The device exhibits a maximum instantaneous forward voltage of 1.0 V and a peak forward surge current capability of 1500 A per leg. Thermal resistance from junction to case is rated at 1.0 °C/W per leg, with a maximum reverse recovery time of 75 ns.

Feature Summary

• Features an electrically isolated base plate within a three-tower package design
• Provides high surge current capability for robust power handling
• Designed as a non-ESD sensitive component for reliable operation

Applications

• High-frequency switching power supplies
• Isolated DC-DC converter topologies
• Industrial motor drive circuits

Procurement Notes

Verify the specific datasheet revision and electrical characteristics against official GeneSiC documentation before integration. Confirm that the terminal configuration matches the circuit layout requirements, noting that devices with the 'R' suffix have reversed leads compared to standard versions. Ensure thermal management solutions align with the specified junction-to-case thermal resistance limits.

Selection Notes

Select this component when an electrically isolated rectifier solution is required for high-current applications. The 100 A rating and low thermal resistance make it suitable for compact designs where heat dissipation is critical. Consider the 75 ns reverse recovery time for efficiency in high-speed switching environments compared to standard recovery diodes.

Part Context

This part belongs to the MURT100 series of silicon super fast recovery diode modules. The series offers various voltage ratings ranging from 50 V to 200 V while maintaining consistent current and thermal performance across the lineup. The three-tower package allows for efficient mounting and electrical isolation in power electronics assemblies.

Replacement Considerations

Direct replacements must match the 100 V reverse voltage, 100 A current rating, and isolated three-tower package form factor. Verify that substitute components maintain equivalent thermal resistance and reverse recovery times to ensure circuit compatibility.