MURT10020

Overview

The MURT10020R is a silicon super fast recovery rectifier module from GeneSiC Semiconductor, rated for a repetitive peak reverse voltage of 200 V and an average forward current of 100 A per package. It utilizes the Three Tower isolation package with an electrically isolated base plate. Key electrical characteristics include a maximum instantaneous forward voltage of 1.0 V per leg at 50 A and a maximum reverse recovery time of 75 ns. The device supports a junction temperature range of -55 °C to 150 °C and offers high surge capability.

Feature Summary

• Features an isolation type Three Tower package with an electrically isolated base plate
• Provides high surge capability for robust power handling
• Designed as a non-ESD sensitive component

Applications

• High frequency switching power supplies
• Inverter circuits
• DC-DC converters

Procurement Notes

Verify the specific part number suffix against official documentation to confirm lead configuration details. Confirm that the requested unit matches the standard Three Tower package dimensions and terminal layout. Ensure thermal management solutions are compatible with the specified junction-to-case thermal resistance values provided in the datasheet.

Selection Notes

Select this component for applications requiring fast recovery characteristics and high current density within an isolated package. Consider the 200 V rating and 100 A continuous current capacity when designing for low-voltage, high-current topologies. Evaluate the thermal performance based on the specified junction-to-case resistance under expected operating conditions.

Part Context

This component belongs to the MURT10005 through MURT10020R series of silicon super fast recovery diodes manufactured by GeneSiC Semiconductor. The series covers voltage ratings from 50 V to 200 V while maintaining a consistent 100 A average forward current rating across all variants in the family.

Replacement Considerations

MURT10020