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Product Detailed Parameters
- Description：DIODE MODULE GP 600V 50A 3TOWER
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Diode Configuration：1 Pair Common Anode
- Technology：Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max)：600 V
- Current - Average Rectified (Io) (per Diode)：50A
- Voltage - Forward (Vf) (Max) @ If：1.7 V @ 100 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：75 ns
- Current - Reverse Leakage @ Vr：25 µA @ 50 V
- Operating Temperature - Junction：-55°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Three Tower
- Supplier Device Package：Three Tower
- Grade：-
- Qualification：-
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Overview
The GeneSiC Semiconductor MURT10060R is a silicon super fast recovery diode module featuring a three-tower package with an electrically isolated base plate. It supports repetitive peak reverse voltages up to 600 V and provides an average forward current of 100 A per package. The device exhibits a maximum instantaneous forward voltage of 1.7 V at 50 A and a maximum reverse recovery time of 110 ns. It withstands a peak forward surge current of 1500 A per leg and operates within a junction temperature range of -55 °C to 150 °C.
Feature Summary
- High surge capability designed for demanding power applications
- Electrically isolated base plate for enhanced safety and thermal management
- Three tower package configuration for efficient mounting
Applications
- High frequency switching power supplies
- Motor drive circuits
- DC-DC converters
Procurement Notes
Verify the specific voltage rating suffix (40, 50, or 60) against the required circuit blocking voltage. Confirm that the reversed lead configuration associated with the 'R' designation matches the PCB footprint design. Ensure thermal interface materials are compatible with the isolated base plate structure for optimal heat dissipation during operation.
Selection Notes
Select this component when high surge current handling and fast recovery characteristics are required in a compact form factor. The 100 A current rating suits medium-power industrial applications. Verify that the 110 ns reverse recovery time meets the switching frequency requirements of the target topology without excessive losses.
Part Context
This part belongs to the MURT100 series of silicon super fast recovery diodes from GeneSiC Semiconductor. The series includes variants with different voltage ratings ranging from 400 V to 600 V. All models share the same three-tower package and electrical performance profile regarding current and recovery speed.
Replacement Considerations
Direct substitutes include other MURT100 series variants such as MURT10040R or MURT10050R if lower voltage ratings are acceptable. Cross-brand replacements must match the 100 A current, 600 V rating, and three-tower package dimensions.
