MURT20005

MURT20005

$68.08
  • Description:DIODE MODULE GP 50V 100A 3TOWER
  • Series:-

SKU:130790439ebb Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE MODULE GP 50V 100A 3TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):50 V
  • Current - Average Rectified (Io) (per Diode):100A
  • Voltage - Forward (Vf) (Max) @ If:1.3 V @ 100 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):75 ns
  • Current - Reverse Leakage @ Vr:25 µA @ 50 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Three Tower
  • Supplier Device Package:Three Tower
  • Grade:-
  • Qualification:-

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MURT20005

Overview

The MURT20005 is a silicon super fast recovery diode module from the MURT series, rated for an average forward current of 200 A per package. It offers repetitive peak reverse voltages ranging from 50 V to 200 V, with the specific MURT20005 variant rated at 50 V. The device features a three tower isolation type package with an electrically isolated base plate. Key electrical parameters include a maximum instantaneous forward voltage of 1.0 V and a peak forward surge current of 2000 A per leg. Thermal resistance from junction to case is 0.45 °C/W per leg, supporting operation within a temperature range of -55 °C to +150 °C.

Feature Summary

  • High surge capability designed for demanding power applications
  • Electrically isolated base plate for enhanced safety and mounting flexibility
  • Three tower package configuration providing robust mechanical structure

Applications

  • Industrial motor drives and inverters
  • Uninterruptible power supply (UPS) systems
  • DC-DC converters and choppers
  • Battery charging equipment

Procurement Notes

Verify the specific voltage rating suffix corresponding to the required application voltage, as the MURT series includes variants from 50 V to 200 V. Confirm whether the standard or reversed lead version is needed, indicated by the 'R' suffix in datasheet part numbers. Ensure thermal management solutions account for the specified junction-to-case thermal resistance values under actual operating conditions.

Selection Notes

Select this component based on the required forward current capacity and reverse voltage blocking level. Consider the thermal resistance characteristics when designing heat sinking solutions. Verify that the package dimensions and terminal configuration match the intended PCB or chassis mounting requirements. Check if the specific voltage grade meets the circuit's peak inverse voltage demands.

Part Context

This component belongs to the MURT series of silicon super fast recovery diode modules manufactured by GeneSiC Semiconductor. The series utilizes a three tower package design suitable for high-current applications. These modules are engineered for superior performance in switching applications requiring fast recovery times and high surge current handling capabilities.

Replacement Considerations

Direct substitutes may include other MURT series modules with matching current ratings but different voltage grades. Cross-reference thermal resistance and package dimensions when considering alternatives from other manufacturers to ensure compatibility with existing cooling and mounting infrastructure.

MURT20005MURT20005
$68.08
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