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The GeneSiC Semiconductor MURT20005R is a silicon super fast recovery diode module rated for a repetitive peak reverse voltage of 50 V and an average forward current of 200 A per package. It features a maximum instantaneous forward voltage of 1.0 V and a peak forward surge current capability of 2000 A per leg. The device exhibits a maximum reverse recovery time of 75 ns and maintains a thermal resistance from junction to case of 0.45 °C/W per leg. Operating temperatures range from -55 °C to +150 °C, with the 'R' suffix indicating reversed leads.
Verify the specific voltage rating matches the application requirement, as the MURT2000 series spans multiple voltage options. Confirm that the reversed lead configuration associated with the 'R' suffix aligns with the PCB footprint design. Ensure thermal management solutions accommodate the specified junction-to-case thermal resistance for reliable operation at elevated temperatures.
Select this component when a high-current super fast recovery rectifier with electrical isolation is required. The 200 A rating supports substantial load currents, while the 75 ns recovery time suits high-frequency applications. Consider the three-tower package for efficient mounting and heat dissipation in constrained spaces requiring isolated grounding.
This part belongs to the MURT2000 series of silicon super fast recovery diode modules. The series includes variants with different voltage ratings, such as 100 V and 200 V, all sharing similar current and thermal characteristics. The MURT20005R specifically denotes the 50 V variant within this lineup.
MURT20010R and MURT20020R are confirmed substitutes within the same series offering higher voltage ratings.