MURT20040R

MURT20040R

$74.06
  • Description:DIODE MODULE GP 400V 100A 3TOWER
  • Series:-

SKU:2ef8a714530f Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE MODULE GP 400V 100A 3TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Common Anode
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):400 V
  • Current - Average Rectified (Io) (per Diode):100A
  • Voltage - Forward (Vf) (Max) @ If:1.35 V @ 100 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):90 ns
  • Current - Reverse Leakage @ Vr:25 µA @ 50 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Three Tower
  • Supplier Device Package:Three Tower
  • Grade:-
  • Qualification:-

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MURT20040R

Overview

The MURT20040R is a silicon super fast recovery diode module manufactured by GeneSiC Semiconductor. It features a three-tower package with an electrically isolated base plate, designed for high surge capability applications. The device supports repetitive peak reverse voltages of 400 V to 600 V and provides an average forward current of 200 A per package. Key electrical parameters include a maximum instantaneous forward voltage of 1.3 V at rated conditions, a peak forward surge current of 2000 A per leg, and a maximum reverse recovery time of 90 ns. The module operates within a junction temperature range of -55 °C to 150 °C.

Feature Summary

  • High surge capability design suitable for demanding power conversion environments
  • Electrically isolated base plate for enhanced safety and thermal management
  • Super fast recovery characteristics minimizing switching losses

Applications

  • High frequency DC-DC converters
  • Uninterruptible Power Supplies (UPS)
  • Industrial motor drives

Procurement Notes

Verify the specific voltage rating suffix (e.g., 400V vs 600V) against the required circuit specifications before procurement. Confirm that the 'R' designation indicates reversed leads as documented in the datasheet. Ensure compatibility with the specified thermal resistance values for heat sink selection. Validate that the operating temperature range meets the environmental requirements of the target application.

Selection Notes

Select this component for applications requiring robust surge handling and fast switching speeds. The three-tower package facilitates efficient mounting and cooling. Consider the 90 ns reverse recovery time when designing snubber circuits or assessing EMI performance. Ensure the average forward current rating aligns with the continuous load requirements while accounting for derating at elevated temperatures.

Part Context

This part belongs to the MURT series of silicon super fast recovery diodes from GeneSiC Semiconductor. The series offers various voltage ratings from 400 V to 600 V, sharing common packaging and thermal characteristics. The MURT20040R specifically denotes the 400 V variant within this lineup, providing a standardized solution for medium-power rectification tasks.

Replacement Considerations

Direct substitutes are not explicitly listed in the provided documentation. Evaluate other modules within the MURT series for different voltage ratings if applicable. Cross-reference with similar three-tower isolated diode modules from other manufacturers, ensuring matching current, voltage, and thermal parameters.

MURT20040RMURT20040R
$74.06
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