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The MURT30020 is a silicon super fast recovery diode module manufactured by GeneSiC Semiconductor. It features a three-tower package with an electrically isolated base plate and screw mount installation. The device supports a repetitive peak reverse voltage of 200 V and an average forward current of 300 A per package. Key electrical parameters include a maximum instantaneous forward voltage of 1.0 V, a peak forward surge current of 2750 A, and a maximum reverse recovery time of 100 ns. The thermal resistance from junction to case is 0.40 °C/W per leg. Operating and storage temperatures range from -55°C to +150°C.
Verify the specific datasheet revision and manufacturer documentation before procurement. Confirm that the component meets all required electrical ratings for the intended application environment. Check for any discontinuation notices or lifecycle status updates from the manufacturer. Ensure proper handling procedures are followed during installation due to the heavy-duty package type.
Select this module when high current capacity and fast recovery times are required in a thermally efficient package. The isolated base plate design allows for flexible mounting options without additional insulators. Consider the thermal resistance and cooling requirements to maintain junction temperature within safe operating limits under continuous load conditions.
This component belongs to the MURT300 series of silicon super fast recovery diodes. The series offers various voltage ratings from 50 V to 200 V while maintaining a consistent 300 A current rating. The three-tower package design provides a compact solution for high-power density applications requiring reliable rectification and fast switching performance.
MURT30020R is a variant with reversed leads. Verify pinout compatibility before substitution.