MURT40005R

MURT40005R

$76.33
  • Description:DIODE MODULE GP 50V 200A 3TOWER
  • Series:-

SKU:27c1949219c5 Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:DIODE MODULE GP 50V 200A 3TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Common Anode
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):50 V
  • Current - Average Rectified (Io) (per Diode):200A
  • Voltage - Forward (Vf) (Max) @ If:1.3 V @ 200 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):125 ns
  • Current - Reverse Leakage @ Vr:25 µA @ 50 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Three Tower
  • Supplier Device Package:Three Tower
  • Grade:-
  • Qualification:-

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MURT40005R

Overview

The GeneSiC Semiconductor MURT40005R is a silicon super fast recovery diode module rated for a repetitive peak reverse voltage of 50 V and an average forward current of 400 A per package. It features a three-tower isolation type package with an electrically isolated base plate. Key electrical parameters include a maximum instantaneous forward voltage of 1.0 V, a peak forward surge current of 3300 A per leg, and a maximum reverse recovery time of 150 ns. The device operates within a junction temperature range of -55°C to 150°C and has a thermal resistance from junction to case of 0.35°C/W per leg.

Feature Summary

  • High surge capability designed for demanding power applications
  • Three tower package configuration providing robust mechanical structure
  • Electrically isolated base plate for enhanced safety and mounting flexibility
  • Not ESD sensitive for simplified handling procedures

Applications

  • High frequency switching power supplies
  • Induction heating systems
  • DC-DC converters requiring fast recovery characteristics

Procurement Notes

Verify the specific suffix 'R' indicates reversed leads as documented in the datasheet. Confirm the 50 V rating aligns with circuit requirements. Check for RoHS compliance status through official manufacturer channels. Ensure thermal management solutions match the specified junction-to-case thermal resistance. Validate package dimensions against existing board layouts before finalizing procurement.

Selection Notes

Select this component when high average current capacity and fast recovery times are required in an isolated package. The 50 V rating suits low voltage high current applications. Consider the three-tower design for efficient heat dissipation. Compare thermal resistance values against alternative modules to ensure adequate cooling. Verify lead orientation matches the circuit design due to the reversed lead configuration.

Part Context

This part belongs to the MURT40005 thru MURT40020R series of silicon super fast recovery diodes. The series offers varying reverse voltage ratings from 50 V to 200 V while maintaining consistent current and surge capabilities. The 'R' designation specifically denotes devices with reversed leads compared to standard configurations. These modules are engineered for high reliability in industrial power conversion environments.

Replacement Considerations

MURT40010R is a verified substitute within the same series offering 100 V reverse voltage with identical current and package specifications.

MURT40005RMURT40005R
$76.33
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