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The GeneSiC Semiconductor MURT40005R is a silicon super fast recovery diode module rated for a repetitive peak reverse voltage of 50 V and an average forward current of 400 A per package. It features a three-tower isolation type package with an electrically isolated base plate. Key electrical parameters include a maximum instantaneous forward voltage of 1.0 V, a peak forward surge current of 3300 A per leg, and a maximum reverse recovery time of 150 ns. The device operates within a junction temperature range of -55°C to 150°C and has a thermal resistance from junction to case of 0.35°C/W per leg.
Verify the specific suffix 'R' indicates reversed leads as documented in the datasheet. Confirm the 50 V rating aligns with circuit requirements. Check for RoHS compliance status through official manufacturer channels. Ensure thermal management solutions match the specified junction-to-case thermal resistance. Validate package dimensions against existing board layouts before finalizing procurement.
Select this component when high average current capacity and fast recovery times are required in an isolated package. The 50 V rating suits low voltage high current applications. Consider the three-tower design for efficient heat dissipation. Compare thermal resistance values against alternative modules to ensure adequate cooling. Verify lead orientation matches the circuit design due to the reversed lead configuration.
This part belongs to the MURT40005 thru MURT40020R series of silicon super fast recovery diodes. The series offers varying reverse voltage ratings from 50 V to 200 V while maintaining consistent current and surge capabilities. The 'R' designation specifically denotes devices with reversed leads compared to standard configurations. These modules are engineered for high reliability in industrial power conversion environments.
MURT40010R is a verified substitute within the same series offering 100 V reverse voltage with identical current and package specifications.