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Product Detailed Parameters
- Description：DIODE MODULE GP 400V 200A 3TOWER
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Diode Configuration：1 Pair Common Cathode
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：400 V
- Current - Average Rectified (Io) (per Diode)：200A
- Voltage - Forward (Vf) (Max) @ If：1.35 V @ 200 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：180 ns
- Current - Reverse Leakage @ Vr：25 µA @ 50 V
- Operating Temperature - Junction：-55°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Three Tower
- Supplier Device Package：Three Tower
- Grade：-
- Qualification：-
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Overview
The GeneSiC Semiconductor MURT40040 is a silicon super fast recovery diode module featuring a three-tower package with an electrically isolated base plate. It provides a repetitive peak reverse voltage of 400 V and supports an average forward current of 400 A per package. The device exhibits a maximum instantaneous forward voltage of 1.70 V at 25 °C and a peak forward surge current capability of 3300 A per leg. Thermal resistance from junction to case is rated at 0.35 °C/W, with an operating temperature range spanning -55 °C to 150 °C.
Feature Summary
- High surge current capability designed for demanding power applications
- Electrically isolated base plate construction for safety and thermal management
- Super fast recovery characteristics minimizing switching losses
Applications
- High-frequency DC-DC converters
- Induction heating systems
- Uninterruptible power supplies (UPS)
Procurement Notes
Verify the specific part marking against the datasheet terminal configuration to ensure correct pinout alignment. Confirm that the ordered unit matches the 400 V rating variant within the MURT400 series family. Check for any revisions in the electrical characteristics table regarding forward voltage or leakage current limits before finalizing procurement specifications.
Selection Notes
Select this component when high average current handling and low reverse recovery time are required in an isolated package. Ensure the system's thermal design can accommodate the specified junction-to-case thermal resistance. Verify that the circuit's peak reverse voltage requirements do not exceed the 400 V rating under all transient conditions.
Part Context
This component belongs to the MURT400 series of silicon super fast recovery diodes manufactured by GeneSiC Semiconductor. The series utilizes a three-tower isolation package architecture. Variants within the series differ primarily in their voltage ratings, ranging up to 600 V, while maintaining similar current and thermal performance profiles.
Replacement Considerations
Cross-reference with other MURT400 series variants if voltage ratings differ. Verify pinout compatibility for direct replacement, noting that 'R' suffix devices have reversed leads compared to standard configurations.
