SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The GeneSiC Semiconductor MURT40060 is a silicon super fast recovery diode module featuring a three-tower package with an electrically isolated base plate. It supports a repetitive peak reverse voltage (VRRM) of up to 600 V and an average forward current (IF(AV)) of 400 A per package. The device exhibits a maximum instantaneous forward voltage of 1.70 V at 200 A and a maximum reverse recovery time of 240 ns. It operates within a junction temperature range of -55°C to 150°C, with a thermal resistance from junction to case of 0.35 °C/W.
Verify the specific voltage rating suffix (e.g., 40 vs 60) against the datasheet table, as the MURT400 series spans multiple voltage options. Confirm terminal configuration markings on the physical unit match the required circuit polarity. Ensure the component is sourced from authorized distributors to guarantee authenticity and traceability of the manufacturing batch.
Select this module when high current handling and fast switching speeds are required in a thermally efficient package. The 600 V rating provides sufficient headroom for standard industrial bus voltages. Consider the 0.35 °C/W thermal resistance for heatsink design calculations. Verify that the 240 ns reverse recovery time meets the system's electromagnetic interference and efficiency requirements compared to slower alternatives.
The MURT40060 belongs to the MURT400 series of silicon super fast recovery diodes manufactured by GeneSiC Semiconductor. This series utilizes a three-tower isolation type package structure. The product line covers voltage ratings from 400 V to 600 V, offering standardized mounting and electrical characteristics across the family for consistent design integration.
Direct substitutes include other models within the MURT400 series, such as the MURT40040, provided the lower voltage rating is acceptable for the application. Cross-brand replacements must be evaluated based on matching IF(AV), VRRM, Trr, and RΘJC specifications.