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Product Detailed Parameters
- Description：DIODE MOD GP 1200V 100A 3TOWER
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Diode Configuration：1 Pair Common Cathode
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：1200 V
- Current - Average Rectified (Io) (per Diode)：100A
- Voltage - Forward (Vf) (Max) @ If：2.6 V @ 100 A
- Speed：Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：25 µA @ 1200 V
- Operating Temperature - Junction：-55°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Three Tower
- Supplier Device Package：Three Tower
- Grade：-
- Qualification：-
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Overview
The GeneSiC Semiconductor MURTA200120 is a silicon super fast recovery diode module rated for a repetitive peak reverse voltage of 1200 V and an average forward current of 200 A. It features a heavy three tower package with an electrically isolated base plate. Key electrical parameters include a maximum instantaneous forward voltage of 2.6 V, a peak forward surge current of 2000 A, and a maximum reverse recovery time of 110 ns. The junction-to-case thermal resistance is 0.45 °C/W per leg. Operating and storage temperatures range from -55 °C to +150 °C.
Feature Summary
- High surge capability provided by the heavy three tower package design
- Electrically isolated base plate for enhanced safety and mounting flexibility
- Not ESD sensitive for simplified handling during assembly
Applications
- Industrial power supplies
- Motor drive circuits
- Inverter systems
Procurement Notes
Verify the specific datasheet revision and terminal configuration before ordering, as suffixes may indicate lead reversals. Confirm that the 1200 V rating aligns with system requirements. Check for RoHS compliance details in the official documentation. Ensure proper torque specifications are followed for screw mounting to maintain thermal performance and mechanical integrity.
Selection Notes
Select this component when high voltage blocking and robust surge handling are required. The 200 A continuous current rating suits medium-power applications. Consider the 0.45 °C/W thermal resistance for heatsink calculations. Verify that the 110 ns reverse recovery time meets switching frequency needs. Compare against lower voltage variants if system constraints allow reduced ratings.
Part Context
This module belongs to the MURTA200 series, which includes variants ranging from 600 V to 1200 V reverse voltage. All members share the same 200 A forward current capacity and heavy three tower package style. The series is designed for silicon super fast recovery applications requiring high reliability and isolation.
Replacement Considerations
Direct substitutes within the same series include MURTA20060(R) for lower voltage applications. Cross-brand replacements require matching the 1200 V VRRM, 200 A IF(AV), and three tower package dimensions. Verify thermal resistance and recovery time compatibility.
