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Product Detailed Parameters
- Description：DIODE MODULE GP 200V 100A 3TOWER
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Diode Configuration：1 Pair Common Anode
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：200 V
- Current - Average Rectified (Io) (per Diode)：100A
- Voltage - Forward (Vf) (Max) @ If：1.3 V @ 100 A
- Speed：Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：25 µA @ 200 V
- Operating Temperature - Junction：-55°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Three Tower
- Supplier Device Package：Three Tower
- Grade：-
- Qualification：-
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Overview
The GeneSiC Semiconductor MURTA20020R is a silicon super fast recovery diode module rated for a repetitive peak reverse voltage of 200 V and an average forward current of 200 A per package. It features a heavy three tower isolation type package with an electrically isolated base plate. Key electrical parameters include a maximum instantaneous forward voltage of 1.0 V, a peak forward surge current of 2000 A per leg, and a maximum reverse recovery time of 100 ns. The device operates within a junction temperature range of -55 to 150 °C.
Feature Summary
- Heavy three tower package design providing high surge capability
- Electrically isolated base plate for safety and thermal management
- Super fast recovery characteristics suitable for high-frequency applications
Applications
- High frequency rectification in power supplies
- Free wheeling diodes in motor drives
- DC-DC converters requiring fast switching
Procurement Notes
Verify the specific suffix 'R' indicates reversed leads as documented in the datasheet. Confirm the exact voltage rating matches the 200 V specification required for the application. Ensure the thermal interface material is compatible with the isolated base plate. Check for any RoHS compliance documentation if required by local regulations. Validate that the screw mount terminals match the mechanical constraints of the heatsink assembly.
Selection Notes
Select this component when a 200 A average forward current and 200 V blocking voltage are required. Consider the 100 ns reverse recovery time for efficiency in high-speed circuits. The isolated base plate eliminates the need for additional insulating hardware. Evaluate the 0.45 °C/W thermal resistance for heat sink sizing. Ensure the operating temperature range meets the environmental conditions of the final assembly.
Part Context
This part belongs to the MURTA series of silicon super fast recovery diode modules from GeneSiC Semiconductor. The series includes variants ranging from 200 V to 400 V reverse voltage ratings. These modules are designed for industrial power conversion applications requiring robust performance and electrical isolation.
Replacement Considerations
Direct substitutes must match the 200 V VRRM, 200 A IF(AV), and Three Tower package dimensions. Verify that alternative parts offer comparable reverse recovery times and thermal resistance values.
