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The MURTA20040 is a silicon super fast recovery diode module manufactured by GeneSiC Semiconductor. It features a heavy three tower package with an electrically isolated base plate. The device supports a repetitive peak reverse voltage of 400 V and an average forward current of 200 A per package. Key electrical parameters include a maximum instantaneous forward voltage of 1.3 V at Tj = 125 °C, a peak forward surge current of 2000 A, and a maximum reverse recovery time of 100 ns. The junction-to-case thermal resistance is 0.45 °C/W per leg.
Verify the specific suffix designation to confirm terminal configuration, as devices marked with 'R' have reversed leads compared to standard versions. Confirm that the ordered component matches the required voltage rating of 400 V and current capacity of 200 A. Ensure compatibility with the intended thermal management solution given the specified thermal resistance values.
Select this component for applications requiring robust surge handling and high-speed switching performance. The isolated base plate allows for direct mounting to heatsinks without additional insulators. Consider the 100 ns reverse recovery time when designing snubber circuits or evaluating EMI performance in high-frequency topologies.
This module belongs to the MURTA200 series, which includes variants ranging from 200 V to 400 V reverse voltage ratings. All members share the same physical three tower package and similar thermal characteristics, differing primarily in their blocking voltage capabilities. The series is designed for industrial power conversion applications.
Direct substitutes within the same series include the MURTA20020 for lower voltage requirements. Verify lead orientation if replacing an 'R' variant with a standard version or vice versa to ensure correct circuit connectivity.
The '(R)' designation indicates that the device has reversed leads compared to the standard version. The electrical specifications remain identical.
No, the datasheet specifies that the device is not ESD sensitive.
The maximum junction operating temperature is 150 °C.