MURTA20060

MURTA20060

$103.00
  • Description:DIODE MODULE GP 600V 100A 3TOWER
  • Series:-

SKU:dc9199985aa9 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:DIODE MODULE GP 600V 100A 3TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):600 V
  • Current - Average Rectified (Io) (per Diode):100A
  • Voltage - Forward (Vf) (Max) @ If:1.7 V @ 100 A
  • Speed:Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:25 µA @ 600 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Three Tower
  • Supplier Device Package:Three Tower
  • Grade:-
  • Qualification:-

Download product information

MURTA20060

Overview

The GeneSiC Semiconductor MURTA20060 is a silicon super fast recovery diode module rated for a repetitive peak reverse voltage of 600 V and an average forward current of 200 A per package. It features a heavy three tower isolation type package with an electrically isolated base plate. Key electrical parameters include a maximum instantaneous forward voltage of 1.7 V, a maximum reverse recovery time of 110 ns, and a junction-to-case thermal resistance of 0.45 °C/W per leg. The device supports a peak forward surge current of 2000 A and operates within a temperature range of -55 to 150 °C.

Feature Summary

  • Heavy three tower package design providing high surge capability
  • Electrically isolated base plate for safety and mounting flexibility
  • Super fast recovery characteristics suitable for high-frequency applications

Applications

  • High power industrial motor drives
  • Uninterruptible power supply (UPS) systems
  • DC-DC converters in renewable energy inverters

Procurement Notes

Verify the specific suffix designation when ordering, as the datasheet indicates that devices with the 'R' suffix have reversed leads compared to standard configurations. Confirm the terminal configuration matches the circuit board layout before installation. Ensure the procurement documentation references the correct part number variant to avoid polarity mismatches during assembly.

Selection Notes

Select this component for applications requiring robust thermal performance and high current handling in a compact footprint. The low thermal resistance facilitates efficient heat dissipation in constrained environments. Consider the 110 ns reverse recovery time for switching frequency requirements. Verify that the system voltage does not exceed the 600 V rating under transient conditions.

Part Context

This module belongs to the MURTA series of silicon super fast recovery diodes, which ranges from 600 V to 1200 V ratings. The series utilizes a common heavy three tower package architecture designed for high reliability in power electronics. It serves as a discrete solution for rectification and freewheeling duties in medium to high-power conversion circuits.

Replacement Considerations

Direct substitutes are not explicitly listed in the provided documentation. When evaluating alternatives, ensure the replacement maintains the same 200 A current rating, 600 V blocking voltage, and compatible three tower package dimensions for mechanical fit.

MURTA20060MURTA20060
$103.00
Buy Now