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The MURTA300120R is a silicon super fast recovery diode module manufactured by GeneSiC Semiconductor. It features a heavy three tower package with an electrically isolated base plate and is not ESD sensitive. The device supports repetitive peak reverse voltages from 600 V to 1200 V, with the MURTA300120R rated at 1200 V. It provides an average forward current of 300 A per package and a peak forward surge current of 2750 A per leg. Maximum instantaneous forward voltage is 2.6 V at Tc = 100 °C, while maximum reverse recovery time is 150 ns. Operating temperature ranges from -55 °C to +150 °C.
Verify the specific part number suffix against official datasheets to confirm terminal configuration, as 'R' devices have reversed leads. Confirm RoHS compliance status through manufacturer documentation before procurement. Ensure thermal management solutions align with the specified junction-to-case thermal resistance values for reliable operation under load conditions.
Select this component for applications requiring high current handling and fast recovery characteristics in isolated configurations. Consider the 1200 V rating for high-voltage systems. Evaluate thermal performance based on the 0.40 °C/W junction-to-case resistance. Verify package compatibility with existing heatsinking infrastructure due to the heavy three tower form factor.
This module belongs to the MURTA300 series of silicon super fast recovery diodes from GeneSiC Semiconductor. The series includes variants with different voltage ratings ranging from 600 V to 1200 V. All models share similar current ratings and package styles, differing primarily in their blocking voltage capabilities and specific electrical characteristics defined in their respective datasheets.
Direct substitutes within the same series include MURTA30060R for lower voltage applications. Cross-brand replacements require matching current, voltage, and package specifications. Verify reverse recovery time and forward voltage drop compatibility to ensure circuit performance remains unchanged during substitution.