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The MURTA400120 is a silicon super fast recovery diode module manufactured by GeneSiC Semiconductor. It features a heavy three tower package with an electrically isolated base plate. The device supports a repetitive peak reverse voltage of 1200 V and an average forward current of 400 A per package. Key electrical characteristics include a maximum instantaneous forward voltage of 2.6 V at 200 A, a peak forward surge current of 3300 A, and a maximum reverse recovery time of 180 ns. The junction-to-case thermal resistance is 0.35 °C/W per leg.
Verify the specific suffix designation to confirm terminal configuration, as the datasheet indicates that devices with the 'R' suffix have reversed leads compared to standard versions. Ensure the procurement documentation explicitly references the GeneSiC Semiconductor or Navitas Semiconductor origin to avoid counterfeit components. Confirm compliance with RoHS directives if required for your assembly process.
Select this component when designing circuits requiring high voltage blocking capabilities combined with significant current handling in a compact form factor. The low thermal resistance facilitates efficient heat dissipation in high-power density designs. Consider the 180 ns reverse recovery time for compatibility with your switching frequency requirements to minimize switching losses.
This module belongs to the MURTA400 series, which includes variants ranging from 600 V to 1200 V reverse voltage ratings. All members of this family share the same physical footprint and thermal characteristics, allowing for design scalability. The series utilizes silicon super fast recovery technology, distinguishing it from standard rectifier modules in terms of switching performance.
Direct substitutes within the same package and rating include the MURTA40060 for lower voltage applications. Verify lead orientation carefully when replacing standard units with 'R' suffix variants due to the reversed terminal configuration specified in the manufacturer documentation.