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The MURTA40040 is a silicon super fast recovery diode module manufactured by GeneSiC Semiconductor. It features a heavy three tower package with an electrically isolated base plate. The device supports a repetitive peak reverse voltage of 400 V and an average forward current of 400 A per package. Key electrical characteristics include a maximum instantaneous forward voltage of 1.3 V at 200 A, a peak forward surge current of 3300 A, and a maximum reverse recovery time of 150 ns. The junction-to-case thermal resistance is 0.35 °C/W per leg.
Verify the specific suffix designation when ordering, as devices marked with 'R' feature reversed leads compared to standard configurations. Confirm that the selected variant matches the required voltage rating within the 200 V to 400 V range. Ensure thermal management solutions account for the specified junction-to-case thermal resistance to maintain safe operating temperatures under load conditions.
Select this component for applications requiring high current handling and fast switching speeds. The 400 A average forward current rating suits heavy-duty industrial loads. Consider the 150 ns reverse recovery time for high-frequency operation where minimizing switching losses is critical. Verify compatibility with the isolated base plate mounting requirements in the system design.
This module belongs to the MURTA400 series, which includes variants ranging from 200 V to 400 V reverse voltage ratings. All members share the same physical package dimensions and terminal configuration while differing in their voltage blocking capabilities. The series utilizes silicon super fast recovery technology optimized for robust performance in demanding power electronics environments.
Direct substitutes within the same family include the MURTA40020 and MURTA40030, which offer lower voltage ratings but identical current and package specifications. When replacing, ensure the lead orientation matches if using an 'R' suffix variant.