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The GeneSiC Semiconductor MURTA40060 is a silicon super fast recovery diode module rated for a repetitive peak reverse voltage of 600 V and an average forward current of 400 A per package. It features a heavy three tower package with an electrically isolated base plate, providing high surge capability with a peak forward surge current of 3300 A. The device exhibits a maximum instantaneous forward voltage of 1.7 V and a maximum reverse recovery time of 180 ns. Operating temperatures range from -55°C to 150°C, with a thermal resistance junction-to-case of 0.35 °C/W.
Verify the specific suffix designation against official documentation to confirm terminal configuration details. Ensure that the selected variant matches the required electrical isolation and thermal management specifications for the intended application environment. Cross-reference datasheet parameters with system requirements before finalizing procurement decisions.
Select this component based on its 600 V blocking voltage and 400 A continuous current rating. Consider the 180 ns reverse recovery time for switching frequency requirements. Evaluate the thermal resistance and operating temperature range to ensure adequate heat dissipation within the designated enclosure constraints.
This part belongs to the MURTA400 series, which includes variants ranging from 600 V to 1200 V reverse voltage ratings. All members share the same physical package dimensions and thermal characteristics, differing primarily in their voltage blocking capabilities. This standardization simplifies mechanical design across different voltage levels.
Direct replacements must match the 600 V rating, 400 A current capacity, and three tower package form factor. Verify that any substitute maintains equivalent reverse recovery time and thermal resistance values to ensure circuit performance integrity.