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The MURTA50040R is a silicon super fast recovery diode module manufactured by GeneSiC Semiconductor. It features a heavy three tower package with an electrically isolated base plate. The device supports a repetitive peak reverse voltage of 400 V and an average forward current of 500 A per package. Key electrical parameters include a maximum instantaneous forward voltage of 1.3 V, a peak forward surge current of 3800 A per leg, and a maximum reverse recovery time of 200 ns. The junction-to-case thermal resistance is 0.30 °C/W per leg. Operating temperatures range from -55 °C to 150 °C.
Verify the specific part number suffix against official datasheets to confirm terminal configuration and voltage ratings. Ensure that the procurement documentation matches the manufacturer's specifications for the MURTA50040R model. Cross-reference thermal requirements and mounting hardware compatibility before finalizing orders.
Select this component for applications requiring high current handling and fast switching speeds. Consider the 400 V rating and 500 A capacity when designing power stages. Evaluate the thermal management needs based on the specified thermal resistance and operating temperature range.
This module belongs to the MURTA500 series of silicon super fast recovery diodes. The series includes variants with different voltage ratings, such as 200 V and 400 V options. These modules are designed for robust performance in demanding power electronics environments.
Check for compatible modules within the same series offering similar current and voltage ratings. Verify pinout compatibility and thermal characteristics when substituting with other super fast recovery diode modules.