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Product Detailed Parameters
- Description：DIODE MOD GP 1200V 300A 3TOWER
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Diode Configuration：1 Pair Common Anode
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：1200 V
- Current - Average Rectified (Io) (per Diode)：300A
- Voltage - Forward (Vf) (Max) @ If：2.6 V @ 300 A
- Speed：Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：25 µA @ 1200 V
- Operating Temperature - Junction：-55°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Three Tower
- Supplier Device Package：Three Tower
- Grade：-
- Qualification：-
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Overview
The MURTA600120R is a silicon super fast recovery diode module manufactured by GeneSiC Semiconductor. It features a heavy three tower package with an electrically isolated base plate and is not ESD sensitive. The device supports a repetitive peak reverse voltage of 1200 V and an average forward current of 600 A per package. Key electrical characteristics include a maximum instantaneous forward voltage of 2.6 V, a peak forward surge current of 4400 A per leg, and a maximum reverse recovery time of 280 ns. The junction-to-case thermal resistance is 0.28 °C/W.
Feature Summary
- High surge capability with a heavy three tower package design
- Electrically isolated base plate for enhanced safety
- Not ESD sensitive during handling
Applications
- Industrial power supplies
- Motor drive systems
- Uninterruptible power supply (UPS) units
Procurement Notes
Verify the specific part number against official GeneSiC Semiconductor documentation to confirm technical specifications. Ensure that the ordering suffix matches the required terminal configuration, as devices with the 'R' suffix have reversed leads. Cross-reference datasheet parameters such as voltage ratings and thermal resistance before procurement to ensure compatibility with the target application requirements.
Selection Notes
Select this component based on its 1200 V blocking voltage and 600 A average forward current capabilities. Consider the 0.28 °C/W thermal resistance for heat sink sizing in high-power applications. Verify the operating temperature range of -55°C to +150°C aligns with environmental conditions. Confirm the need for an electrically isolated base plate and non-ESD sensitive handling in the system design.
Part Context
This component belongs to the MURTA600 series of silicon super fast recovery diodes from GeneSiC Semiconductor. The series includes variants with different reverse voltage ratings ranging from 600 V to 1200 V. All models share common features such as the heavy three tower package and electrically isolated base plate, providing a standardized solution for high-current rectification applications.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided source material.
