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The MURTA60040R is a silicon super fast recovery diode module from the MURTA600 series, manufactured by GeneSiC Semiconductor. It features a heavy three tower package with an electrically isolated base plate. The device supports a repetitive peak reverse voltage of 400 V and an average forward current of 600 A per package. Key electrical parameters include a maximum instantaneous forward voltage of 1.3 V at 600 A and a maximum reverse recovery time of 250 ns per leg. The module operates within a junction temperature range of -55 °C to 150 °C.
Verify the specific datasheet version and manufacturer documentation before procurement. Confirm that the terminal configuration matches the intended circuit layout, as the 'R' suffix indicates reversed leads compared to standard variants. Ensure thermal interface materials are compatible with the isolated base plate design for optimal heat dissipation during operation.
Select this component when high current handling and fast switching speeds are required in a robust, isolated package. The 400 V rating suits medium-voltage DC applications. Consider the 1.3 V forward voltage drop for efficiency calculations and the 0.28 °C/W thermal resistance for heatsink sizing. Verify lead orientation requirements due to the reversed pinout associated with the 'R' designation.
This part belongs to the MURTA600 series of silicon super fast recovery diodes. The series offers various voltage ratings from 200 V to 400 V while maintaining a consistent 600 A current capacity. The MURTA60040R specifically addresses applications requiring higher blocking voltage within this high-current family, utilizing the same heavy-duty three tower packaging structure.
Direct substitutes within the same series include MURTA60020(R) for lower voltage applications. Cross-brand replacements require matching the 600 A current rating, 400 V blocking voltage, and similar thermal resistance values. Verify pinout compatibility, especially regarding the reversed lead configuration if replacing non-R variants.