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The MV2N4392 is an N-channel Junction Field-Effect Transistor (JFET) manufactured by Microchip Technology. It features a silicon construction and is housed in a TO-18-3 through-hole package. Key electrical specifications include a drain-source breakdown voltage of 40 V, a gate-source breakdown voltage of -40 V, and a maximum continuous drain current of 100 pA. The device operates with a zero-gate-voltage drain-source current of 8 mA and exhibits a drain-source on-resistance of 80 Ohms. Power dissipation is rated at 360 mW, with an operating temperature range spanning from -65 C to +175 C.
Verify component authenticity through authorized distributors or official Microchip channels. Confirm RoHS compliance status as historical data indicates potential lead content variations. Ensure the specific ordering suffix matches project requirements. Request original datasheets and test reports during procurement to validate technical parameters against design specifications.
Select this component when high-temperature resilience and precise JFET characteristics are required. Consider the TO-18-3 package constraints for PCB layout. Evaluate the 40 V breakdown limits against circuit voltage peaks. Assess the 360 mW power dissipation rating for thermal management needs within the specified -65 C to +175 C operational window.
The MV2N4392 belongs to the Microchip JFET product line, designed for specialized analog and RF applications. It complements other discrete semiconductor offerings from the manufacturer, providing reliable performance in harsh environments. The component supports various electronic systems requiring stable field-effect transistor behavior under extreme thermal conditions.
Cross-reference with standard 2N4392 equivalents if available. Verify pinout compatibility and electrical parameter overlaps before substitution. Consult Microchip documentation for any direct replacement recommendations or updated series alternatives.